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Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Published online by Cambridge University Press:  10 February 2011

Xingsheng Liu ,
Jesus Noel Calata ,
Houyun Liang ,
Wangzhou Shi ,
Xuanyin Lin ,
Kuixun Lin  and
G. G. Qin
Xingsheng Liu
Affiliation:
Virginia Polytechnic Inst and State Univ, Dept of Materials Science and Engineering, Blacksburg, VA 24061–0237
Jesus Noel Calata
Affiliation:
Virginia Polytechnic Inst and State Univ, Dept of Materials Science and Engineering, Blacksburg, VA 24061–0237
Houyun Liang
Affiliation:
Shantou Univ., Science Research Institute, Shantou, China, 515063
Wangzhou Shi
Affiliation:
Shantou Univ., Science Research Institute, Shantou, China, 515063
Xuanyin Lin
Affiliation:
Shantou Univ., Science Research Institute, Shantou, China, 515063
Kuixun Lin
Affiliation:
Shantou Univ., Science Research Institute, Shantou, China, 515063
G. G. Qin
Affiliation:
Peking Univ., Department of Physics, Beijing, China, 100871
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Abstract

Through a comparative study of the light emission and light excitation property of porous silicon (PS) and Si oxide, photoluminescence (PL) and photoluminescence excitation (PLE) mechanisms for blue-light-emitting PS are analyzed. Strong blue light (445nm) and ultraviolet light (365nm) emission from silicon-rich silicon oxynitride films at room temperature were observed. An analysis of the PL and PLE spectra of PS and Si oxide indicated that for blue-light emission from PS, there are two types of photoexcitation processes: photo-excitation occurring in nanometer Si particles (NSP's) and in the Si oxide layers covering NSPs, and radiative recombination of electron-hole pairs taking place in luminescence centers (LCs) located on the interfaces between NSP's and Si oxide and those inside Si oxide layers. The PL spectra of silicon-rich silicon oxynitride films implies that the PL originated from some LCs in SiOx and SiOxNy:H, while PLE spectra indicates that photoexcitation occurs in NSPs, SiOx and SiOxNy:H. The 365 nm band is attributed to the former two photoexcitation processes and the 445 nm one to the third process. As such, the quantum confinement/luminescence center model appears to be a satisfactory model in explaining the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 141
Copyright
Copyright © Materials Research Society 2000

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