Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-26T21:33:29.864Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen

Published online by Cambridge University Press:  01 February 2011

M. Capizzi ,
A. Polimeni ,
G. Baldassarri Högher von Höghersthal ,
M. Bissiri ,
A.Amore Bonapasta ,
F. Jiang ,
M. Stavola ,
M. Fischer ,
A. Forchel  and
I.K. Sou
...Show all authors
M. Capizzi
Affiliation:
INFM and Dipartimento di Fisica, Univ. di Roma, P.le A. Moro 2, I-00185 Roma, Italy
A. Polimeni
Affiliation:
INFM and Dipartimento di Fisica, Univ. di Roma, P.le A. Moro 2, I-00185 Roma, Italy
M. Bissiri
Affiliation:
INFM and Dipartimento di Fisica, Univ. di Roma, P.le A. Moro 2, I-00185 Roma, Italy
A.Amore Bonapasta
Affiliation:
ICMAT-CNR, Via Salaria Km 29,300 - C.P 10 - 00016 Monterotondo Stazione Roma, Italy
F. Jiang
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
M. Stavola
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
M. Fischer
Affiliation:
Universität Würzburg, Technische Physik, Am Hubland 97074 Würzburg, Germany
A. Forchel
Affiliation:
Universität Würzburg, Technische Physik, Am Hubland 97074 Würzburg, Germany
I.K. Sou
Affiliation:
Department of Physics, Hong Kong University, Kowloon, China
W.K. Ge
Affiliation:
Department of Physics, Hong Kong University, Kowloon, China
Get access

Abstract

The effects of H irradiation and thermal annealing on the optical properties of (InGa)(AsN) heterostructures have been investigated by photoluminescence (PL) and infrared absorption, as well as by theoretical methods. It has been found that different N clusters contribute to the band gap red-shift reported for (InGa)(AsN) alloys, with a sizable localization of the carrier wavefunctions around N atoms. Infrared absorption measurements indicate that two different NH complexes are formed, whose vibrational frequencies are in good agreement with theoretical estimates. The ability of hydrogen to passivate different isoelectronic impurities is confirmed by PL results in H irradiated Zn(STe).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F9.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] See, e. g., Hydrogen in Semiconductors, edited by Pankove, J. I. and Johnson, N. M., Semiconductors and Semimetals, Vol. 34 (Academic Press, New York, 1991).Google Scholar
[2] Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S., and Yazawa, Y., Jpn. J. Appl. Phys. 35, 1273 (1996)Google Scholar
[3] For a review see: Buyanova, I. A., Chen, W. M., and Monemar, B., MRS Internet J. Nitride Semicond. Res. 6, 2 (2001)Google Scholar
[4] Shan, W., Walukiewicz, W., Ager, J. W. III, Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., and Kurtz, S. R., Phys. Rev. Lett. 82, 1221 (1999)Google Scholar
[5] Kent, P. R. C. and Zunger, A., Phys. Rev. B 64, 115208 (2001)Google Scholar
[6] Bissiri, M., Gaspari, V., Baldassarri, G. H. v. H., Ranalli, F., Polimeni, A., Capizzi, M., Frova, A., Fischer, M., Reinhardt, M., and Forchel, A., to appear in phys. stat. sol.(a) (2002).Google Scholar
[7] Baldassarri, G. H. v. H., Bissiri, M., Polimeni, A., Capizzi, M., Geddo, M., Fischer, M., Reinhardt, M., and Forchel, A., Appl. Phys. Lett. 78, 3472 (2001)Google Scholar
[8] Baldassarri, G. H. v. H., Bissiri, M., Ranalli, F., Gaspari, V., Polimeni, A., Capizzi, M., Frova, A., Fischer, M., Reinhardt, M., and Forchel, A., Physica E xxx, zzz (2002).Google Scholar
[9] Stumpf, R., Gonze, X., and Scheffler, M., Research Report No. 1 of the Fritz-Haber-Institut, Berlin (FRG), April 1990.Google Scholar
[10] Vanderbilt, D., Phys. Rev. B 41, 7892 (1990)Google Scholar
[11] Bonapasta, A. Amore and Capizzi, M., Phys. Rev. B 61, 8180 (2000)Google Scholar
[12] Bergman, K., Stavola, M., Pearton, S. J., and Lopata, J., Phys. Rev. B 37, 2770 (1998)Google Scholar
[13] If we choose for the attempt frequency the value of the lowest vibrational frequency observed for the H-N complexes (2015 cm-1), ED decreases by 20 meV at most.Google Scholar
[14] Janotti, A., Zhang, S. B., and Wei, Su-H., Phys. Rev. Lett. 88, 125506 (2002)Google Scholar
[15] Ge, W. K., Lam, S.B., Sou, I.K., Wang, J., Wang, Y., Li, G.H., Han, H.X., and Wang, Z.P., Phys. Rev. B 55, 10035 (1997)Google Scholar
[16] Seong, M. J., Alawhadi, H., Miotkowski, I., Ramdas, A.K., and Miotkowska, S., Phys. Rev. B 60, R16275 (1999).Google Scholar