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Photo-Induced CVD of Tantalum Pentoxide Dielectric Films Using an Injection Liquid Source

Published online by Cambridge University Press:  10 February 2011

J.-Y. Zhang ,
I.W. Boyd ,
M.B. Mooney ,
P.K. Hurley ,
B.J. O'sullivan ,
J.T. Beechinor ,
P.V. Kelly ,
G.M. Crean  and
J.-P. Senateur
J.-Y. Zhang
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, UK
I.W. Boyd
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, UK
M.B. Mooney
Affiliation:
National Microelectronics Research Centre, LeeMaltings, Prospect Row, Cork, Ireland
P.K. Hurley
Affiliation:
National Microelectronics Research Centre, LeeMaltings, Prospect Row, Cork, Ireland
B.J. O'sullivan
Affiliation:
National Microelectronics Research Centre, LeeMaltings, Prospect Row, Cork, Ireland
J.T. Beechinor
Affiliation:
National Microelectronics Research Centre, LeeMaltings, Prospect Row, Cork, Ireland
P.V. Kelly
Affiliation:
National Microelectronics Research Centre, LeeMaltings, Prospect Row, Cork, Ireland
G.M. Crean
Affiliation:
National Microelectronics Research Centre, LeeMaltings, Prospect Row, Cork, Ireland
J.-P. Senateur
Affiliation:
INPG-ENS de physique de Grenoble, BP 46-38402 SAINT MARTIN D'HERES CEDEX, Grenoble, France
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Abstract

In this paper the new technique of ultraviolet-assisted injection liquid source (UVILS) chemical vapour deposition (CVD) of thin tantalum pentoxide films on p-type Si (100) wafers is presented. This method involves the use of a krypton chloride (KrCl*) excimer lamp, radiating at 222 nm, and a novel injection liquid source capable of delivering precisely controllable quantities of a novel high-volatility liquid metalorganic precursor into the CVD chamber. The physical and chemical properties of the films formed have been studied using spectroscopic ellipsometry and Fourier transform infrared spectroscopy measurements while the electrical properties of the films were determined by surface charge analysis, capacitancevoltage, and current-voltage measurements. Simple metal/oxide/silicon capacitor structures incorporating this tantalum pentoxide have been fabricated. Refractive index values of 2.09±0.07, dielectric constant values of 18-24, fixed oxide charge content of < 1 × 1011 cm−2 and breakdown fields higher than 2 MV/cm can be readily obtained in the as-deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 397
Copyright
Copyright © Materials Research Society 1999

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References

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