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Photo-Induced Current Spectroscopy in Undoped Cvd Diamond Films

Published online by Cambridge University Press:  10 February 2011

E. Borchi ,
M. Bruzzi ,
L. Lombardi ,
D. Menichelli ,
S. Miglio ,
S. Pirollo ,
S. Sciortino  and
D. Serafini
E. Borchi
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
M. Bruzzi
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
L. Lombardi
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
D. Menichelli
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
S. Miglio
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
S. Pirollo
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
S. Sciortino
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
D. Serafini
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
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Abstract

Combined TSC and PICTS measurements have been used to determine the activation energies (Et) and capture cross-sections (σ) of the trap levels inside the bandgap of CVD diamond in the energy range 0.4−0.7 eV. High temperature TSC analysis has been performed to determine the trap parameters in the energy range from 0.9 to 1.3 eV. A fieldmap in the Et−σ plane has been obtained from the combination of the TSC and PICTS data depicting the regions corresponding to two isolated trap levels and to a continuous distribution of states. The concentrations of defects have been calculated from the TSC signals and the measurement of the charge collection efficiency of the diamond samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 277
Copyright
Copyright © Materials Research Society 2000

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