Hostname: page-component-669899f699-chc8l Total loading time: 0 Render date: 2025-05-04T19:09:40.608Z Has data issue: false hasContentIssue false
  • English
  • Français

Photo-Induced Current Spectroscopy in Undoped Cvd Diamond Films

Published online by Cambridge University Press:  10 February 2011

E. Borchi ,
M. Bruzzi ,
L. Lombardi ,
D. Menichelli ,
S. Miglio ,
S. Pirollo ,
S. Sciortino  and
D. Serafini
E. Borchi
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
M. Bruzzi
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
L. Lombardi
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
D. Menichelli
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
S. Miglio
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
S. Pirollo
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
S. Sciortino
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
D. Serafini
Affiliation:
Dipartimento di Energetica, Via S.Marta, 3, 50139 Firenze Italy, I.N.F.M. Largo E.Fermi 2, 50139 Firenze, Italy
Get access

Abstract

Combined TSC and PICTS measurements have been used to determine the activation energies (Et) and capture cross-sections (σ) of the trap levels inside the bandgap of CVD diamond in the energy range 0.4−0.7 eV. High temperature TSC analysis has been performed to determine the trap parameters in the energy range from 0.9 to 1.3 eV. A fieldmap in the Et−σ plane has been obtained from the combination of the TSC and PICTS data depicting the regions corresponding to two isolated trap levels and to a continuous distribution of states. The concentrations of defects have been calculated from the TSC signals and the measurement of the charge collection efficiency of the diamond samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 277
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. McKeag, R. D. and Jackmann, R. B., Diamond Relat. Mater. 7, p.513–518 (1998)Google Scholar
2. D. Meier for the RD42 Collaboration in Development of CVD Diamond Radiation Detectors, edited by Davidson, J. L., Brown, W. D., Gicquel, A., Spitsyn, B. V. and Angus, J. C. (Electrochemical Society Proceedings 97–32, Pennington, NJ 1998), p. 491–502 Google Scholar
3. Borchi, E., Bruzzi, M., Bucciolini, M., Guasti, A., Mazzocchi, S., Pirollo, S., Sciortino, S., Nucl. Instrum. Meth. A 426, p.181–184 (1999), E. Borchi, M. Bruzzi, C. Leroy and S. Sciortino, J. Phys. D 31, p. 609–616 (1998).Google Scholar
4. Blood, P. and Orton, J. W., The electrical characterization of semiconductors: majority carriers and electron states, Academic Press, London, 1992, p. 478–492.Google Scholar
5. Borchi, E., Bruzzi, M., Pirollo, S., Sciortino, S., Solid State Electron. 42, p. 674–676 (1998).Google Scholar
6. Lewandoski, A. C. and McKeever, S. W. S., Phys Rev. B 43, p.8163–8178 (1991).Google Scholar
7. Menichelli, D.,, Pirollo, S., Li, Z., A detailed microscopic analysis of deep levels in heavily irradiated medium resistivity silicon detectors, to be published in Trans on Nucl. Sc.Google Scholar
8. Gheeraert, E., Deneuville, A., Gonon, P., Benabdesselam, M. and lacconi, P., Phys. Stat. Sol. A 172, p.183–192 (1999), P. Gonon, A. Deneuville, F. Fontaine and E. Gheeraert, J. Appl. Phys.78, p. 6633–6638 (1995).Google Scholar
9. Tromson, D., Bergonzo, P., Brambilla, A., Mer, C., Foulon, F. and Amosov, V. N., Phys. Stat. Sol. A 174, p.155–164 (1999).Google Scholar
10. Bizzarri, A., Bogani, F., Bruzzi, M., Sciortino, S., Nucl. Instr. Meth. A 426, p.169–172 (1999).Google Scholar
11. Ziesel, R., Nebel, C. E., Stutzmann, M., J. Appl. Phys. 84, p.6105–6108 (1998).Google Scholar