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Photo-Hall, Pr, Pl and Photoconductivity Study On Native Defects in CuInS2

Published online by Cambridge University Press:  22 February 2011

H. Y. Ueng ,
Y. H. Cheng  and
H. L. Hwang
H. Y. Ueng
Affiliation:
Department of Electrical Engineering, National Sun Yet-Sen University, Kaoshiung, Taiwan, R.O.C.
Y. H. Cheng
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Abstract

By correlating the results of photoreflectance, photoconductivity, photoluminescence, and differential-Hall and photo-Hall measurements with the stoichiometry, for a number of undoped single crystal samples, we could conclude two donor levels (35 meV, 70 meV) and three acceptor levels (100 meV, 155 meV, 170 meV) distributed in the forbidden ga.p for undoped CuInS2 samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 253
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

]1] Hsu, Y.J., Yang, M.H., Tang, R.S., Hsu, T.M. and Hwang, H.L., Cryst. Growth 20, 83 (1984)Google Scholar
[2] Tell, B., Shay, J.b. and Kasper, H.M., J. Appl. Phys. 43, 2469 (1972)Google Scholar
[3] Ueng, H.Y. and Hwang, H.L., J. Phys. Chem. Solids, 80– 12, 1297 (1989)Google Scholar
[4] Gonzalez, J., Torreo, J.A. and Perez, G.S., Phys. Stat. Sol. (a) 69, K37 (1982)CrossRefGoogle Scholar
[5] Shay, J.L., Phys. Rev. B 2, 803 (1970)Google Scholar
[6] Bhattachaarya, R.N., Shen, H., Parayanthal, P. and Pollak, F.H., Phys. Rev. B 37, 4044 (1988)Google Scholar
[7] Verheijen, A.W., Giling, L.J. and Bloem, J., J. Mater. Res. Bull. 14, 237 (1979)CrossRefGoogle Scholar
] Hsu, T.M. and Lin, J.H., Phys. Rev. B 37, 4106 (1988)Google Scholar
[9] LShay, J. and Wernick, J.H., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications, Pergamon Press, New York, p.4, 12,118, 1975 Google Scholar
[10] Mora, S., Romeo, N. and Tarricone, L., Solid State Commun. 29, 155 (1979)CrossRefGoogle Scholar
[11] Kazmerski, L.L. and Shieh, C.C., Thin Solid Films 41, 35 (1977)Google Scholar
[12] Lobo, D.C..J. Vac Sci. Technil 15, 265 (1981) Solids 37, 173 (1976)Google Scholar
[14] Vecchi, M.P. and Ramos, J., J. Appl. Phys. 52(3), 1981 Google Scholar
[15] Horig, V., Kuhn, G., Moller, W., Muller, A., Neumann, H. and Reccius, E., Kristall und Teclnik 14, 229 (1979)Google Scholar
[16] Mandel, L., Tomlinson, R.D., Hamnpshire, M.J. and Neumann, H., Solid state commun. 32, 201 (1979)CrossRefGoogle Scholar
[17] Verherijn, A.W., Thesis, Univ. of Nijmegen, Nijmegen, Netherland, 1979 Google Scholar
[18] Pankov, J.l., Optical Processes in Semiconductors, Dover, New York, 1975 Google Scholar
[19] Look, D.C. and Manthlruthil, J.C., J. Phys. Chem. Solids 37, 173 (1976)CrossRefGoogle Scholar
[20] Lablou, N. and Masse, G., J. Apll. Phys. 52, 978 (1981)Google Scholar
[21] Binsma, J.J.M., J. Luminescence 27, 35 (1982)CrossRefGoogle Scholar
[22] lakemore, J.S., Semiconductor Statistics, Pergamon Press, Oxford,1962 Google Scholar
[23] Wiley, J.D. and Didomenico, M. Jr, Phys. Rev. B 2, 427 (1970)Google Scholar
[24] Lange, P., Neff, H., Fearheiley, M.L. and Bachmann, J., Electronic Materials 14, 6 (1985)Google Scholar