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Photo-Hall, Pr, Pl and Photoconductivity Study On Native Defects in CuInS2

Published online by Cambridge University Press:  22 February 2011

H. Y. Ueng ,
Y. H. Cheng  and
H. L. Hwang
H. Y. Ueng
Affiliation:
Department of Electrical Engineering, National Sun Yet-Sen University, Kaoshiung, Taiwan, R.O.C.
Y. H. Cheng
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Abstract

By correlating the results of photoreflectance, photoconductivity, photoluminescence, and differential-Hall and photo-Hall measurements with the stoichiometry, for a number of undoped single crystal samples, we could conclude two donor levels (35 meV, 70 meV) and three acceptor levels (100 meV, 155 meV, 170 meV) distributed in the forbidden ga.p for undoped CuInS2 samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 253
Copyright
Copyright © Materials Research Society 1992

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References

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