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Photoemission Study of the α-Sn/Cdte(110) Interface Growth

Published online by Cambridge University Press:  25 February 2011

Ming Tang ,
David W. Niles ,
Isaac Hernández-Calderón  and
Hartmut Hóchst
Ming Tang
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
David W. Niles
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
Isaac Hernández-Calderón
Affiliation:
Physics Department, Centro de Investigacion y, Estudios Avanzados del IPN, Mexico D.F.
Hartmut Hóchst
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
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Abstract

Angular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 213
Copyright
Copyright © Materials Research Society 1987

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References

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