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Photoemission Results for Laser-Annealed Si(111) and Ge(111) Surfaces

Published online by Cambridge University Press:  15 February 2011

F.J. Himpsel ,
D.E. Eastman ,
P. Heimann ,
B. Reihl ,
C.W. White  and
D.M. Zehner
F.J. Himpsel
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
D.E. Eastman
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
B. Reihl
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
C.W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
D.M. Zehner
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
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Abstract

We have studied the valence band and surface-core-level states for laser-annealed, thermally-annealed, and cleaved Ge(111) and Si(l11) surfaces with high resolution photoelectronspectroscopy using synchrotron radiation. For the annealed surfaces we find two surface states near the top of the valence band as well as characteristic surface core level spectra. These indicate the existence of a common local bonding geometry for all these surfaces. We observe that the (1 × 1) and cleaved (2 × 1) surfaces are not related as recently reported for Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 267
Copyright
Copyright © Materials Research Society 1982

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References

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