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Photoemission Exafs from InP(110) and Al/InP(110)

Published online by Cambridge University Press:  21 February 2011

K. M. Choudhary
Affiliation:
University of Notre Dame, Materials Science and Engineering, Notre Dame, Indiana 46556
P. S. Mangat
Affiliation:
University of Notre Dame, Materials Science and Engineering, Notre Dame, Indiana 46556
D. Kilday
Affiliation:
Synchrotron Radiation Center and Department of Physics, University of Wisconsin-Madison, Stoughton, Wisconsin 53589
G. Margaritondo
Affiliation:
Synchrotron Radiation Center and Department of Physics, University of Wisconsin-Madison, Stoughton, Wisconsin 53589
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Abstract

Photoemission EXAFS (PEXAFS) studies of InP(110), InP(110) + 1 Å Al and InP(110) + 3 Å Al are presented. In each case, photoemission from the P 2p core-level was monitored using a cylindrical mirror analyzer by a two-point CIS (constant-initial-state spectroscopy) method in 150–280 eV photon energy range. The data were analyzed by conventional Fourier analysis procedures using the theoretical phase function of McKale et al. plus absorber phase function of Teo and Lee. No diffraction effect other than EXAFS is observed. For the clean InP(110) surface, the PEXAFS results show relaxation (contraction) of the surface in excellent agreement with the LEED results. But a small contraction in the P-P bond length (surface unit mesh parameter, a0) has also been measured, which was not reported in the LEED studies. For the InP(110) surface covered with 1 Å Al, metal (cluster)-induced surface structural changes in the substrate are determined which include removal of relaxation of the surface unit mesh in combination with change in the P-In bond length within the surface unit mesh. At the 3 Å Al-coverage on the InP(110) surface, the interface resembles AlP.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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