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Photoelectrochemical Etching of InxGal-xN

Published online by Cambridge University Press:  15 February 2011

Hyun Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S.M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
R.J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
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Abstract

A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal-mol-1) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background doping (> 1020cm-3) in the material.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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