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Photoelectrochemical Etching of InxGal-xN
Published online by Cambridge University Press: 15 February 2011
Abstract
A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal-mol-1) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background doping (> 1020cm-3) in the material.
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- Copyright © Materials Research Society 1999