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Photodetectors Fabricated from Strain-free GaAs Coupled Quantum Dots

Published online by Cambridge University Press:  31 January 2011

Jiang Wu ,
Dali Shao ,
Omar Manasreh ,
Alvason Zhenhua Li ,
Zhiming M Wang  and
Gregory J. Salamo
Jiang Wu
Affiliation:
[email protected], University of Arkansas, Electrical Engineering, Fayetteville, Arkansas, United States
Dali Shao
Affiliation:
[email protected], University of Arkansas, fayetteville, fayetteville, Arkansas, 72701, United States, 4798568920
Omar Manasreh
Affiliation:
[email protected], United States
Alvason Zhenhua Li
Affiliation:
[email protected]
Zhiming M Wang
Affiliation:
[email protected], University of Arkansas, Institute of Nanoscale Science and Engineering, Fayetteville, Arkansas, United States
Gregory J. Salamo
Affiliation:
[email protected], United States
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Abstract

In this article, an alternative strain-free growth mode is presented where GaAs coupled-quantum dots are grown on lattice matched AlGaAs. The coupled quantum dots were grown at 550 °C in a molecular beam epitaxy system. The GaAs quantum dots were characterized by using a photoluminescence technique and an atomic force microscope. The photodetector was fabricated into normal incident configuration and photoconductivity spectra were measured covering the mid-infrared spectrum of 2.0 – 8.0 micron (intersubband transitions) and the visible-near-infrared spectrum of 0.5 – 0.9 micron (interband or exciton transitions). The photoresponse spectra in mid-infrared spectral range were found to exist at temperatures lower than 80 K, while the photoresponse spectra in the visible-near-infrared range were observed at temperatures as high as 300 K.

Keywords

molecular beam epitaxy (MBE)optoelectronicphotoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1208: Symposium O – Excitons and Plasmon Resonances in Nanostructures II , 2009 , 1208-O04-04
Copyright
Copyright © Materials Research Society 2010

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