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Photo-Cvd Silicon Nitride for Gaas Mesfet Passivation

Published online by Cambridge University Press:  26 February 2011

R. Padmanabhan ,
B. J. Miller  and
G. Tam
R. Padmanabhan
Affiliation:
Physical Electronics & Packaging Laboratory, Semiconductor Research and Development Laboratory, Motorola, Inc., Mail Drop B-136, 5005 East McDowell, Phoenix, Az. 85008.
B. J. Miller
Affiliation:
Physical Electronics & Packaging Laboratory, Semiconductor Research and Development Laboratory, Motorola, Inc., Mail Drop B-136, 5005 East McDowell, Phoenix, Az. 85008.
G. Tam
Affiliation:
Compound Semiconductor Technology Center, Phoenix Corporate Research and Development Center, Motorola, Inc., Mail Drop A-170, 5005 East McDowell, Phoenix, Az. 85008.
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Abstract

Silicon nitride films were deposited using a photochemical vapor deposition method. The defect density in these films was under 100/cm2 and the film adhesion was in excess of 104 psi. No lift-off was observed at power densities of up to 10 A/cm2 at applied voltages of up to 100. The film stress was compressive and under 5x103 psi. Total mobile ion concentration in the films did not exceed 109/cm2. Device analysis was carried out using Motorola dual gate MESFETs. Device degradation was evaluated in terms of surface potential sensitive parameters like source-drain current and resistance, by making comparisons in these parameters before and after passivation. Some degradation (up to 17 %) occurred in some of these parameters subsequent to device passivation. These results are comparable to or better than those encountered in most other low temperature films (like plasma enhanced CVD and polyimide films). The observed device properties are explained in terms of the film composition and the applicability of photo-CVD nitride films for MESFET passivation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 379
Copyright
Copyright © Materials Research Society 1998

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References

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