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Photocurrent measurements of MgxZn1-xO epitaxial layers of different x

Published online by Cambridge University Press:  31 January 2011

Richard K. Thöt ,
Thomas Sander ,
Peter J. Klar  and
Bruno Meyer
Richard K. Thöt
Affiliation:
[email protected], Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
Thomas Sander
Affiliation:
[email protected], Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
Peter J. Klar
Affiliation:
[email protected], Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
Bruno Meyer
Affiliation:
[email protected], Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
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Abstract

The MgxZn1-xO alloy in wurtzite structure can be grown with Mg contents x up to 0.4. The band gap of the alloy increases with x. Furthermore, ZnO/MgxZn1-xO quantum well structures are of type I and thus are of interest for the active region of opto-electronic devices.

We report on in-plane photocurrent measurements of MgxZn1-xO epitaxial layers with x up to about 0.4 in the temperature range from 80 K to 300 K. Epitaxial films are either grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates with a thin MgZnO buffer layer and by chemical vapor deposition on a-plane ZnO substrates. We map the evolution of the band gap transitions as a function of the Mg composition at different temperatures for the c-plane samples and as a function of polarization of the incoming light for an a-plane sample. The contributions of A, B and C interband transitions to the band gap signals are analysed and discussed.

Keywords

alloymolecular beam epitaxy (MBE)photoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H10-33
Copyright
Copyright © Materials Research Society 2010

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