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Photoconductivity of Pentacene Thin Film Transistors

Published online by Cambridge University Press:  21 March 2011

D. Knipp
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
D.K. Murti
Affiliation:
Xerox Research Center of Canada, Mississauga, ON, Canada L5K 2L1
B. Krusor
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
R. Apte
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
L. Jiang
Affiliation:
Xerox Research Center of Canada, Mississauga, ON, Canada L5K 2L1
J.P. Lu
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
B.S. Ong
Affiliation:
Xerox Research Center of Canada, Mississauga, ON, Canada L5K 2L1
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
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Abstract

A very large enhancement of the photoconductivity in pentacene transistors at negative gate voltages is observed. The enhancement is attributed to the separation of electron-hole pairs by the gate field and the consequent slow recombination. The ratio of photoconductivity to dark conductivity is approximately independent of mobility, for samples with a wide range of microstructure. The pentacene films were thermally deposited at different deposition rates and temperatures on silicon thermal oxide. The structure and the morphology of the films were studied by x-ray diffraction measurements and atomic force microscopy, and the influence of the deposition temperature on the morphology and structural properties is discussed. The size of the crystals is correlated with the crystalline bulk phase of the material, which increases with the deposition temperature and the film thickness. The mobility of the transistors increases with the size of the crystallites.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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