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Photoconductivity Decay in Amorphous Semiconductors

Published online by Cambridge University Press:  26 February 2011

William Pickin ,
Doroteo Mendoza  and
Juan Carlos Alonso
William Pickin
Affiliation:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, 04510 México, D.F., Mexico.
Doroteo Mendoza
Affiliation:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, 04510 México, D.F., Mexico.
Juan Carlos Alonso
Affiliation:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, 04510 México, D.F., Mexico.
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Abstract

Based on modifications of the standard multiple trapping approach we present a theory of photoconductivity decay from the steady state in which explicit account is taken of the minority carrier behaviour. We use this to develop a physical understanding of the decay process. We obtain the intensity dependence of the decay time and compare it with experimental results for hydrogenated amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 125
Copyright
Copyright © Materials Research Society 1987

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