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Photochemical Processes in Photo-Assisted Epitaxy of CdxHg 1-xTe

Published online by Cambridge University Press:  25 February 2011

S J C Irvine ,
J B Mullin ,
G W Blackmore ,
O D Dosser  and
H Hill
S J C Irvine
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcestershire, WR14 3PS, UK.
J B Mullin
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcestershire, WR14 3PS, UK.
G W Blackmore
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcestershire, WR14 3PS, UK.
O D Dosser
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcestershire, WR14 3PS, UK.
H Hill
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcestershire, WR14 3PS, UK.
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Abstract

Mechanisms for the low temperature photo-dissociation of alkyl precursors for the epitaxial growth of CdxHg1-xTe (CMT) are discussed. The roles of vapour and surface nucleation are considered in the light of the free radical model which also can provide methods for controlling the vapour phase photochemistry. Higher quality CMT has been grown at 250 °C by using dimethyl mercury as a source of free methyl radicals. Problems encountered in reducing growth temperature for multilayer epitaxy are considered for CdTe and HgTe and conditions established for epitaxial growth at 200°C.The roles of alkyl concentration, substrate temperature, UV intensity and free radical concentration are explored. Results on the first reported growth of CdTe deposition using a cw UV laser source are compared with the arc lamp grown layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 153
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1 Irvine, S J C, Giess, J, Gough, J S, Blackmore, G W, Royle, A, Mullin, J B, Chew, N G and Cullis, A G, J Crystal Growth 77 437 (1986).CrossRefGoogle Scholar
2 Irvine, S J C, Mullin, J B, J Vac Sci TechnoT-(to be published).Google Scholar
3 Kisker, D W and Feldman, R D, J Crystal Growth 72 102 (1985).CrossRefGoogle Scholar
4 Morris, B J, Appl Phys Lett 48 867 (1986).CrossRefGoogle Scholar
5 Ahlgren, W L, Himoto, R H, Sen, S and Ruth, R P, Third International Conference on MOVPE, 13-17 April 1986, Universal City, California.Google Scholar
6 Irvine, S J C, Mullin, J B and Tunnicliffe, J, J Crystal Growth 68 188 (1984).Google Scholar
7 Faurie, J P, Million, A and Piaguet, J, J Crystal Growth 59 10 (1982).Google Scholar
8 Migliorato, P and White, A M, S S Electronics 26 65 (1983).CrossRefGoogle Scholar
9 Arch, D K, Faurie, J P, Staudenmann, J L, Hibbs-Brenner, M, Chow, P, J Vac Sci Technol A4 2101 (1986).CrossRefGoogle Scholar
10 Mullin, J B and Irvine, S J C, J Vac Sci Technol A 4 700 (1986).CrossRefGoogle Scholar
11 Irvine, S J C and Mullin, J B, J Crystal Growth (in-press).Google Scholar
12 Irvine, S J C, Giess, J, Mullin, J B, Blackmore, G W and Dosser, O D, Materials Letters 3 290 (1985).CrossRefGoogle Scholar
13 Irvine, S J C, Giess, J, Mullin, J B, Blackmore, G W and Dosser, O D, J Vac Sci Technol B 3 1450 (1985).CrossRefGoogle Scholar
14 Avery, A J and Diskett, D.J (private communication).Google Scholar