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Photochemical Area-Selective Etching of Si And Sio2 Using Synchrotron Radiation

Published online by Cambridge University Press:  21 February 2011

Jun-Ichi Takahashi ,
Yuichi Utsumi  and
Tsuneo Urisu
Jun-Ichi Takahashi
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243–01, Japan
Yuichi Utsumi
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243–01, Japan
Tsuneo Urisu
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243–01, Japan
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Abstract

Photochemical etching of Si and SiO2 using synchrotron radiation (SR) is carried out. The etching rate of SiO2 is much higher than those of poly-Si and single crystal Si. The etching rate of poly-Si increases as dopant concentration decreases. These material selectivities are quite different from those for plasma- or laser-excited etching. These new phenomena in SR-stimulated etching can be explained by a reaction model that contains reaction centers that are produced by both core and binding electronic excitation of Si and fluorinated Si in the surface layers. These centers are quenched by majority carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 53
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1) Urisu, T. and Kyuragi, H., J.Vac.Sci.&Technol. B5, 1436 (1987).Google Scholar
2) Takahashi, J., Utsumi, Y., and Urisu, T.. in Extended Abstracts of the 20th Conference on Solid State Devices and Materials, (Business Center for Academic Societies, Tokyo, 1988), p.73.Google Scholar
3) Urisu, T., Kyuragi, H., Utsumi, Y., Takahashi, J., and Kitamura, M., Rev. Sci. Instrum. 60, 2157 (1989).Google Scholar
4) Flamm, D.L., Donnelly, V.M., and Mucha, J.A.. J.Appl.Phys. 52, 3633 (1981).Google Scholar
5) Winters, H.F. and Haarer, D., Phys.Rev.B 36, 6613 (1987)Google Scholar
6) Hirose, M. and Ogura, T., in Photon, Beam, Plasma Stimulated Chemical Processes at Surfaces, edited by Donnelly, V.M., Herman, I.P., and Hirose, M. (Mater. Res. Soc. Proc. 75, Pittsburg, PA 1986) p.357.Google Scholar
7) Ogura, T., Hayashi, T., Miyazaki, S., and Hirose, M., Jpn.J.Appl.Phys. 27, L2256 (1988).Google Scholar