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Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

Published online by Cambridge University Press:  15 February 2011

Indra Nurdjaja  and
E. A. Schiff
Indra Nurdjaja
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 13244–1130
E. A. Schiff
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 13244–1130
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Abstract

We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 723
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Crandall, R.S., Appl. Phys. Lett. 42, 451 (1983).Google Scholar
2. Wang, Q., Crandall, R. S., and Schiff, E. A., in Proceedings of the 2st Photovoltaics Specialists Conference (IEEE, 1996), 1113.Google Scholar
3. Chen, I. and Wronski, C. R., J.Non-Cryst. Solids 190, 58 (1995)‥Google Scholar
4. Jiang, L., Wang, Q., Schiff, E. A., Guha, S., Yang, J., and Deng, X., Appl. Phys. Lett. 69, 3063 (1996).Google Scholar
5. Gu, Q., Wang, Q., Schiff, E. A., Li, Y.-M., and Malone, C. T., J.Appl. Phys. 76, 2310 (1994).Google Scholar