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Photo-Assisted Anodic Etching of Gallium Nitride Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Hongqiang Lu ,
Ziming Wu  and
Ishwara Bhat
Hongqiang Lu
Affiliation:
Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NewYork 12180
Ziming Wu
Affiliation:
Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NewYork 12180
Ishwara Bhat
Affiliation:
Department of Electrical, Computer and System Engineering, Rensselaer Polytechnic Institute, Troy, NewYork 12180
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Abstract

In this paper, the first study of photo-assisted anodic etching of unintentionally doped n-GaN at room temperature is reported. The electrolyte used is a mixture of buffered aqueous solution of tartaric acid and ethylene glycol. The etching rate varies from ∼20 Å/min to as high as 1600 Å/min. A systematic study shows that i) the etch rate, as well as the surface roughness, increases with the current density; ii) the etching rate is the highest when the pH of the electrolyte is around 7; iii) the etching is faster when there is more ethylene glycol in the electrolyte solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1035
Copyright
Copyright © Materials Research Society 1997

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References

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