Article contents
Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)
Published online by Cambridge University Press: 10 February 2011
Abstract
Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain consistently the whole set of our experimental results.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996
References
- 2
- Cited by