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PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

Published online by Cambridge University Press:  10 February 2011

F. Blecher ,
K. Seibel  and
M. Bohm
F. Blecher
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
K. Seibel
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
M. Bohm
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
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Abstract

The noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 175
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Bohm, M., Blecher, F., Eckhardt, A., Schneider, B., Benthien, S., Keller, H., Luld, T., Rieve, P., Sommer, M., Lind, R.C, Humm, L., Daniels, M., Wu, N., Yen, H., High Dynamic Range Image Sensor in Thin Film on ASIC Technology for Automotive Applications, in Advanced Microsystems for Automotive Applications, edited by Ricken, D.E. and Gessner, W. (Springer Verlag, Berlin, 1998).Google Scholar
2 Schneider, B., Fischer, H., Benthien, S., Keller, H., Lulk, T., Rieve, P., Sommer, M., Schulte, J., Bohm, M., Technical Digest of International Electron Devices Meeting, 1997, 209-212.Google Scholar
3 Bohm, M., Luld, T., Fischer, H., Schulte, J., Schneider, B., Benthien, S., Blecher, F., Coors, S., Eckhardt, A., Keller, H., Rieve, P., Seibel, K., Sommer, M., Sterzel, J., Design and Fabrication of a High Dynamic Range Image Sensor in TFA Technology, to be presented at the 1998 VLSI Circuit Symposium, Honolulu.Google Scholar
4 Ramo, S., Proc. IRE 27, 584 (1939).Google Scholar
5 Cavalleri, G., Gatti, E., Fabbri, G. and Svelto, V., Nucl. Instrum. Methods 92, 137 (1971).Google Scholar
6 Blecher, F., Seibel, K., Hillebrand, M., Bbhm, M., New Method to Determine the a-Si:H pin Diode Series Resistance by Noise Measurements, to be presented at the 1998 MRS Spring Meeting, San Francisco, CA, 1998.Google Scholar
7 Muller, R., Rauschen, 1st ed. (Springer Verlag, Berlin, 1979), pp. 105–111 Google Scholar
8 Machlup, S., J. Appl. Phys., 25, 341 (1954).Google Scholar
9 Hooge, F.N, IEEE Trans. Electron Devices, 41, 1926–1935 (1994).Google Scholar
10 Parman, C.E, Israeloff, N.E, Kakalios, J., Phys. Rev. B, 47, 12578 (1993).Google Scholar
11 Blecher, F., Seibel, K., Böhm, M., DFG Forschungszwischenbericht, contract Bo 772/3-1, Universitit-GH Siegen, 1997.Google Scholar
12 Street, R.A, Nelson, S., Mat. Res. Soc. Symp. Proc. 192, 441–452 (1990).Google Scholar
13 Wieczorek, H., J. Appl. Phys., 77, 3300–3307 (1995).Google Scholar