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Phosphorus and Boron Doping Effect on Nanocrystalline Formation in Hydrogenated Amorphous and Nanocrystalline Mixed-phase Silicon Thin Films

Published online by Cambridge University Press:  31 January 2011

Chunsheng Jiang ,
Yanfa Yan ,
Helio R. Moutinho ,
Mowafak Al-Jassim ,
Baojie Yan ,
Laura Sivec ,
Jeff Yang  and
Subhendu Guha
Chunsheng Jiang
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Yanfa Yan
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Helio R. Moutinho
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Mowafak Al-Jassim
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Baojie Yan
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Laura Sivec
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Jeff Yang
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Subhendu Guha
Affiliation:
[email protected], United States
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Abstract

Phosphorus and Boron doping effects on the microstructure of nanocrystallites in hydrogenated amorphous and nanocrystalline mixed-phase silicon films were investigated using Raman spectroscopy, secondary ion mass spectrometry, cross-sectional transmission electron microscopy, atomic force microscopy, and conductive atomic force microscopy. The characterizations revealed the following observations. First, the mixed-phase Si:H films can be heavily doped in ˜1021/cm3 by adding PH3 and BF3 in the precursor gases. Second, the intrinsic and doped films can be made in a similar crystalline volume fraction by adjusting hydrogen dilution ratio. The hydrogen dilution ratio is much higher for P-doped films than for the intrinsic film with the similar crystallinity. Third, the doping impacts the nanostructures in the films significantly. Nanograins aggregate to form cone-shaped clusters in the intrinsic and B-doped films but isolate and randomly distribute in amorphous tissues in the P-doped films. The cones in the intrinsic and B-doped films are also different. The cone-angle is smaller and the nanograin density is lower in the B-doped films than in the intrinsic films. These P- and B-doping effects on the nanocrystalline formation are interpreted in terms of diffusions of Si-related radicals during the film growth.

Keywords

BSinucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A17-07
Copyright
Copyright © Materials Research Society 2009

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References

[1] Nakayama, S. Kawashima, I. and Murota, J. J. Electrochem. Soc: Solid State Science & Technol. 133, 1721(1986).Google Scholar
[2] Saleh, R. and Nickel, N.H. Thin Solid Films 427, 266(2003).Google Scholar
[3] Kumar, P. and Schroeder, B. Thin Solid Films 516, 580(2008).Google Scholar
[4] Matsui, T. Kondo, M. and Matsuda, A. J. Non-Cryst. Solids 338–340, 646(2004).Google Scholar
[5] Yan, B. Jiang, C.S. Teplin, C.W. Moutinho, H.R. Al-Jassim, M.M., Yang, J. and Guha, S. J. Appl. Phys. 101, 033712(2007).Google Scholar
[6] Jiang, C.S. Yan, B. Moutinho, H.R. Al-Jassim, M.M., Yang, J. and Guha, S. Mater. Res. Soc. Symp. Proc. 989, 15(2007).Google Scholar
[7] For a review, see Shah, A. V. Meier, J. Vallat-Sauvain, E., Wyrsch, N. Kroll, U. Droz, C. and Graf, U. Sol. Energy Mater. Sol. Cells 78, 469(2003).Google Scholar
[8] Collins, R.W. Ferlauto, A.S. Ferreira, G.M. Chen, C. Koh, J. Koval, R.J. Lee, Y. Pearce, J.M. and Wronski, C.R. Sol. Energy Mater. Sol. Cells 78, 143(2003).Google Scholar
[9] Teplin, C.W. Iwaniczko, E. To, B. Moutinho, H. Stradins, P. and Branz, H.M. Phys. Rev. B 74, 235428(2006).Google Scholar
[10] Matsuda, A. Thin Solid Films 337, 1(1999).Google Scholar
[11] Teplin, C.W. Jiang, C.S. Stradins, P. and Branz, H.M. Appl. Phys. Lett. 92, 093114(2008).Google Scholar
[12] For a review, see Kamins, T.I. Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic, Boston, 1997), p.32.Google Scholar
[13] Toyama, T. Yoshida, W. Sobajima, Y. and Okamoto, H. J. Non-Cryst. Solids 354, 2204(2008).Google Scholar