Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-20T04:49:55.706Z Has data issue: false hasContentIssue false

Phonon Transport and Thermoelectricity in Defect-Engineered InAs Nanowires

Published online by Cambridge University Press:  21 February 2012

Annie Weathers
Affiliation:
Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas. Center for Nano and Molecular Science, The University of Texas at Austin, Austin, Texas.
Arden L. Moore
Affiliation:
Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas. Center for Nano and Molecular Science, The University of Texas at Austin, Austin, Texas.
Michael T. Pettes
Affiliation:
Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas. Center for Nano and Molecular Science, The University of Texas at Austin, Austin, Texas.
Daniel Salta
Affiliation:
Material Science and Engineering Graduate Program, The University of Texas at Austin, Austin, Texas. Center for Nano and Molecular Science, The University of Texas at Austin, Austin, Texas.
Jaehyun Kim
Affiliation:
Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas. Center for Nano and Molecular Science, The University of Texas at Austin, Austin, Texas.
Kimberly Dick
Affiliation:
The Nanometer Structure Consortium (nmC@LU) and Division of Solid State Physics, Lund University, S-22100 Lund, Sweden. Polymer & Materials Chemistry, Lund University, S-22100 Lund, Sweden.
Lars Samuelson
Affiliation:
The Nanometer Structure Consortium (nmC@LU) and Division of Solid State Physics, Lund University, S-22100 Lund, Sweden.
Heiner Linke
Affiliation:
The Nanometer Structure Consortium (nmC@LU) and Division of Solid State Physics, Lund University, S-22100 Lund, Sweden.
Philippe Caroff
Affiliation:
Institut d’Electronique, de Microelectronique et de Nanotechnologie, UMR CNRS 8520, F-59652 Villeneuve d’Ascq, France.
Li Shi
Affiliation:
Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas. Material Science and Engineering Graduate Program, The University of Texas at Austin, Austin, Texas. Center for Nano and Molecular Science, The University of Texas at Austin, Austin, Texas.
Get access

Abstract

There have been reports of improvements in the thermoelectric figure of merit through the use of nanostructured materials to suppress the lattice thermal conductivity. Here, we report on a fundamental study of the combined effects of defect planes and surface scattering on phonon transport and thermoelectric properties of defect-engineered InAs nanowires. A microfabricated device is employed to measure the thermal conductivity and thermopower of individual suspended indium arsenide nanowires grown by metal organic vapor phase epitaxy. The four-probe measurement device consists of platinum resistance thermometers and electrodes patterned on two adjacent SiNx membranes. A nanowire was suspended between the two membranes, and electrical contact between the nanowire and the platinum electrodes was made with the evaporation of a Ni/Pd film through a shadow mask. The exposed back side of the device substrate allows for characterization of the crystal structure of the suspended nanowire with transmission electron microscopy (TEM) following measurement. The 100-200 nm diameter zincblende (ZB) InAs nanowire samples were grown with randomly spaced twin defects, stacking faults, or phases boundaries perpendicular to the nanowire growth direction, as revealed by transmission electron microscopy (TEM) analysis. Compared to single-crystal ZB InAs nanowires with a similar lateral dimension, the thermal conductivity of the defect-engineered nanowires is reduced by fifty percent at room temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gudiken, M., Lauhon, L., Wang, J., Smith, D. and Lieber, C. M., Nature 409, 617 (2002).Google Scholar
2. Fasth, C., Fuhrer, A., Samuelson, L., Golavach, V. N. and Loss, D., Physical Review Letters 98, 266801 (2007).Google Scholar
3. Mingo, N., Applied Physics Letters 84 14, 2652 (2004).Google Scholar
4. Duan, X., Huang, Y., Cui, Y., Wang, J. and Lieber, C. M., Nature 409, 66 (2001).Google Scholar
5. Pei, Y., Heinz, N. A., LaLonde, A. and Snyder, G. J., Energy and Environmental Science 4, 3640 (2011).Google Scholar
6. Minnich, A. J., Dresselhaus, M. S., Ren, Z. F. and Chen, G., Energy and Environmental Science 2, 466 (2009).Google Scholar
7. Koh, Y. K., Vineis, C. J., Calawa, S. D., Walsh, M. P. and Cahill, D. G., Applied Physics Letters 94, 153101 (2009).Google Scholar
8. Vineis, C. J., Shakouri, A., Majumdar, A. and Kanatzidis, M. G., Advanced Materials 22, 3970 (2010).Google Scholar
9. Dhara, S., Solanki, H. S., , A. P. R., Singh, V., Sengupta, S., Chalke, B. A., Dhar, A., Gokhale, M., Bhattacharya, A. and Deshmukh, M. M., Physical Review B 84, 121307 (2011).Google Scholar
10. Hollinger, G., Skheyta-Kabbani, R. and Gendry, M., Physical Review B 49 16, 11159 (1994).Google Scholar
11. Caroff, P., Dick, K. A., Johansson, J., Messing, M. E., Deppert, K. and Samuelson, L., Nature Nanotech 4, 50 (2009).Google Scholar
12. Thelander, C., Dick, K. A., Borgstrom, M. T., Froberg, L. E., Caroff, P., Nilsson, H. A. and Samuelson, L., Nanotechnology 21 14, 205703 (2010).Google Scholar
13. Kutty, M. N., Plis, E., Khoshakhlagh, A., Myers, S., Gautam, N., Smolev, S., Sharma, Y. D., Dawson, R., Krishna, S., Lee, S. J. and Noh, S. K., Journal of Electronic Materials 39 10, 2203 (2010).Google Scholar
14. Smolinsky, G., Chang, R. P. and Mayer, T. M., Journal of Vacuum Science and Technology 18 1, 12 (1981).Google Scholar
15. Yu, C., Saha, S., Zhou, J., Shi, L., Cassell, A., Cruden, B. A., Ngo, Q. and Li, J., Journal of Heat Transfer 128, 235 (2006).Google Scholar
16. Shi, L., Li, D., Yu, C., Jang, W., Kim, D., Yao, Z., Kim, P. and Majumdar, A., Journal of Heat Transfer 125, 881 (2003).Google Scholar
17. Mavrokefalos, A., Pettes, M. T., Zhou, F. and Shi, L., Review of Scientific Instruments 78, 034901 (2007).Google Scholar
18. Bowers, R., Ure, W., Bauerle, J. E. and Cornish, A. J., Journal of Applied Physics 30 6, 930 (1959).Google Scholar
19. Guillou, G. L. and Albany, H. J., Physical Review B 5 6, 2301 (1972).Google Scholar
20. Zhou, F., Moore, A. L., Bolinsson, J., Froberg, L., Pettes, M. T., Kong, H., Rabenberg, L., Caroff, P., Stewart, D. A., Mingo, N., Dick, K. A., Samuelson, L., Linke, H. and Shi, L., Physical Review B 83, 205416 (2011).Google Scholar
21. Thelander, C., Caroff, P., Plissard, S., Dey, A. W. and Dick, K. A., Nano Letters 11, 2424 (2011).Google Scholar
22. Schroer, M. D. and Petta, J. R., Nano Letters 10, 1618, (2010).Google Scholar