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Phonon Interaction in InGaAs/GaAs Quantum Dots
Published online by Cambridge University Press: 01 February 2011
Abstract
The carrier-phonon interaction in self-organized In(Ga)As/GaAs quantum dots is investigated under resonant excitation of the ground-state transition. Different phonon-coupled processes are observed. The distinction between Raman scattering and hot-luminescence process has been resolved by time-dependent photoluminescence measurements. The quantum dot LO (33.8 meV) as well as an interface (36.5 meV) phonon mode is observed by resonant Raman scattering. For the QD LO phonon mode, a very short radiative lifetime of 10 ps was found.
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- Copyright © Materials Research Society 2008
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