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Phonon Interaction in InGaAs/GaAs Quantum Dots

Published online by Cambridge University Press:  01 February 2011

Stefan Werner ,
Patrick Zimmer ,
André Strittmatter  and
Axel Hoffmann
Stefan Werner
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, Berlin, 10623, Germany
Patrick Zimmer
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, Berlin, 10623, Germany
André Strittmatter
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, Berlin, 10623, Germany
Axel Hoffmann
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergs traße 36, Berlin, 10623, Germany
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Abstract

The carrier-phonon interaction in self-organized In(Ga)As/GaAs quantum dots is investigated under resonant excitation of the ground-state transition. Different phonon-coupled processes are observed. The distinction between Raman scattering and hot-luminescence process has been resolved by time-dependent photoluminescence measurements. The quantum dot LO (33.8 meV) as well as an interface (36.5 meV) phonon mode is observed by resonant Raman scattering. For the QD LO phonon mode, a very short radiative lifetime of 10 ps was found.

Keywords

luminescenceelectrical propertiesRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1053: Symposium EE – Phonon Engineering–Theory and Applications , 2007 , 1053-EE03-03
Copyright
Copyright © Materials Research Society 2008

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References

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