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Phenomena Rlated to Concurrent Multiple Complex Plane Representations of the Immittance Data

Published online by Cambridge University Press:  10 February 2011

Mohammad A. Alim
Mohammad A. Alim*
Affiliation:
Hubbell Incorporated, The Ohio Brass Company 8711 Wadsworth Road, Wadsworth, Ohio 44281
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Abstract

The concurrent multiple complex plane representation of the single/multiple semicircular relaxation(s) for the same immittance data provides a choice of selecting simultaneously operative phenomena within a heterogeneous system. The origin of this representation and the selection criteria of the phenomena are highlighted via structure-property-processing relationships. These include the development of a single equivalent circuit model by acquiring knowledge on the type of aterials, history, chemistry, composition, processing variables, microstructures, etc. The correspondence within the complex planes is attributed to the relative magnitudes of the contributing elements in the equivalent circuit model and dominance of the operative phenomena. The limitations concerning the transformation of the data from one complex plane to the other are reviewed, considering Debye/non-Debye conduction processes within the series-parallel microstructural network of electrical paths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 411: Symposium T – Electricaly-Based Microstructural Characterization , 1995 , 113
Copyright
Copyright © Materials Research Society 1996

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References

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