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Phase Formation in the Pt/Inp Thin Film System

Published online by Cambridge University Press:  25 February 2011

D. A. Olson ,
K. M. Yu  and
J. Washburn
D. A. Olson
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 T. Sands, Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701
K. M. Yu
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 T. Sands, Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701
J. Washburn
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 T. Sands, Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701
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Abstract

InP substrates with 40nm metal films of Pt were encapsulated in SiO2, and isochronally annealed up to 600°C in flowing forming gas. The composition and morphology of the phases that formed were studied using x-ray diffraction, Rutherford Backscattering, and transmission electron microscopy.

Results show that the Pt/InP system begins interacting at 300°C. TEM analysis of the 350°C anneal shows unreacted Pt and and additional polycrystalline phases, with no observed orientation relationship with the substrate. The Pt layer has been completely consumed by 400°C, with a uniform reacted layer indicated by RBS. At high temperatures (between 500°C and 600°C), the reaction products are PtIn2 and PtP2. The two phases show a tendency for phase separation, with a higher concentration of PtP2 at the InP/reacted layer interface. The phosphide phase also shows a preferred orientation relationship with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 47
Copyright
Copyright © Materials Research Society 1989

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