Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:31:09.533Z Has data issue: false hasContentIssue false

Phase Formation and Phase Stability in the Al-Ti Thin Film System

Published online by Cambridge University Press:  26 February 2011

L.R. Parks
Affiliation:
Cornell University, Dept of Materials Science and Engineering, Ithaca, NY
D.A. Lilienfeld
Affiliation:
Cornell University, National Nanofabrication Facility, Ithaca, NY, 14853
P. BØRgesen
Affiliation:
Cornell University, Dept of Materials Science and Engineering, Ithaca, NY
R. Raj
Affiliation:
Cornell University, Dept of Materials Science and Engineering, Ithaca, NY
Get access

Abstract

This study focuses on the sequential formation of aluminide phases during annealing of titanium and aluminum thin film bilayers. The formation of titanium-rich intermetallic phases at higher annealing temperatures is emphasized. Using Rutherford Backscattering Spectrometry (RBS) analysis, and x-ray diffraction, phases formed as a function of temperature have been identified. The phases Al3Ti through Ti3Al were observed over the temperature range 450–750°C, where reaction with the SiO2 substrate occurred. All phases were present as discreet layers within the samples with several layered phases coexisting at the higher temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lipsitt, H.A. in High Temperature Ordered Intermetallic Alloys, edited by Koch, C.C., Liu, C.T., and Stoloff, N.S. (Mater. Res. Soc. Proc. 39, Pittsburgh, PA 1985) pp 351364 Google Scholar
2. Hong, Q.Z., Lilienfeld, D.A., Mayer, J.W., J. Apply. Phys., 64. (9) 1 Nov '88, 447883Google Scholar
3. Nakamura, K., Lau, S.S., Nicolet, M.-A., Mayer, J.W., Appl. Phys. Lett. 28, 277 (1976)Google Scholar
4. Colgan, E. and Mayer, J.W., Nuclear Instruments and Methods in Physics Research, B 17 242249 (1986)Google Scholar
5. Wittmer, M., LeGoues, F., and Huang, H.-C.W., J. Electrochem. Soc., 132 1450 (1985)CrossRefGoogle Scholar
6. Krafcsik, I., Gyulai, J., Palstrom, C.J., Mayer, J.W., Appl. Phys. Lett.43, 1015 (1983)CrossRefGoogle Scholar
7. Suni, I., Blomberg, M., and Saarilahti, J., J. Vac. Sci.& Technol., A 3, (6), Nov/Dec 22336 (1985)CrossRefGoogle Scholar
8. Tardy, J. and Tu, KN., Phys. Rev. B 32, 2070 (1985)Google Scholar
9. Zhao, X.-A., So, F.C.T.. and Nicolet, M.-A., J. Appl. Phys., 63, 2800 (1988)CrossRefGoogle Scholar
10. Thuillard, M., Tran, L.T., Nieh, C.W., Nicolet, M.-A., J. Apply. Phys., 65 (6), 15 Mar.,2553(1989)Google Scholar
11. Ball, R.K. and Todd, A.G., Thin Solid Films, 149, 269282 (1987)Google Scholar
12. Han, C.C. and Bene, R.W., Apply. Phys. Lett., 47 (10), 15 Nov, 10771079 (1985)Google Scholar
13 Howard, J.K., Lever, R.F., Smith, P.J., and Ho, P.S., J. Vac. Sci. & Technol., 13, 68 (1976)Google Scholar
14. Howard, J.K, White, J. F., and Ho, P.S., J. Apply. Phys., 49 4083 (1978)CrossRefGoogle Scholar
15. Huang, H.-C.W., and Wittmer, M. in Thin Films and Interfaces II. edited by Baglin, J.E., Campbell, D.R., and Chu, W.K., (Mater. Res. Soc. Proc. 25,. Pittsburgh, PA 1984) p. 157 Google Scholar
16. Bower, R.W., Appl. Phys. Lett., 23 99 (1973)CrossRefGoogle Scholar
17. Ting, C.Y. and Crowder, B.L., J. Electrochem Soc, 129, 2590 (1982)CrossRefGoogle Scholar