Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T18:29:47.967Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Development in Pt/ Si-Ge Alloy Layers

Published online by Cambridge University Press:  15 February 2011

Michael W. Carmondy ,
Andrew S. Johnson  and
Eric P. Kvam
Michael W. Carmondy
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907-1289
Andrew S. Johnson
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907-1289
Eric P. Kvam
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907-1289
Get access

Abstract

The phase development sequences for Pt layers on Si, Ge, and Si-Ge at 327°C were studied by X-ray diffraction, energy dispersive spectroscopy, and transmission electron microscopy. The reactions on pure Si and pure Ge followed the sequences reported previously. The reactions on the alloy layers differed slightly from the simple binary reactions. A ternary Pt(Si,Ge) reacted layer was formed on the alloy samples as the final phase on the Si-Ge alloy layer. This is discussed in terms of enthalpies of formation and the relative diffusion rates of Pt, Si, and Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 399
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. , Roosevelt People, IEEE J. Quan. Elect. QE 22, 1696 (1986).Google Scholar
2. Hong, Q. Z., Zhu, J. G., and Carter, C. B., and Mayer, J. W., J. Appl. Phy. Lett. 58, 905, (1991).Google Scholar
3. Tu, K.N., andMayer, J. W. “Electronic Thin Film Science for Electrical and Materials Engineers,” (Macmillan Pub. Company, New York, 1993).Google Scholar
4. Powder Diffraction File (JCPDS - International Centre for Diffraction Data, Swarthmore, PA, 1992).Google Scholar
5. Deoboer, F. R., Boom, R., Mattens, W.C., Miedema, A.R. and Niessen, A. K., “Cohesion in Transition Metal Alloys,” (North Holland, Amsterdam, 1988).Google Scholar
6. Liou, H. K., Wu, X., Tu, K. N., Kesan, V. P., and Gennser, U., Appl. Phys. Lett. 60, 445, (1992).Google Scholar
7. Zhong, P. and Zheng, Y., J. Appl. Phy. Lett. 62, 3259, (1993).Google Scholar
8. Hong, Q.Z. and Mayer, J. W., J. AppLPhy. Lett. 66, 611, (1989).Google Scholar
9. Topor, L. and Kleppa, L.J., Metallkund, Z., 77, 65 (1986).Google Scholar
10. Castanet, R., J. Chem. Thermodyn., 14, 639 (1982).Google Scholar
11. Fitzgerald, E.A., JOM, 41, 20 (1989).Google Scholar