Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T01:56:28.167Z Has data issue: false hasContentIssue false
  • English
  • Français

The pH Effect On Chemical Mechanical Planarization Of Copper

Published online by Cambridge University Press:  01 February 2011

Tianbao Du  and
Vimal Desai
Tianbao Du
Affiliation:
Advanced Materials Processing and Analysis CenterUniversity of Central FloridaOrlando, FL 32816, U. S. A.
Vimal Desai
Affiliation:
Advanced Materials Processing and Analysis CenterUniversity of Central FloridaOrlando, FL 32816, U. S. A.
Get access

Abstract

This study explores the effect of pH on the chemical mechanical polishing (CMP) characteristics of copper in H2O2 and KIO3 based slurries under various dynamic and static conditions. High purity copper disc was used to study the dissolution and oxidation kinetics at various pH (2 to 10) with 5% H2O2 or 0.1M KIO3. Electrochemical techniques were used to investigate the dissolution/passivation behavior of Cu. The affected surface layers of the statically etched Cu-disc were investigated using X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). In 5% H2O2, the Cu removal rate decreases with an increase in pH and reaches minimum at pH 6, and then increases under alkaline conditions. XPS results indicate that the surface oxide formed at various pH values was responsible for this CMP trend. However, with 0.1M KIO3, the CMP removal rates were found to be lower at pH 2. The maximum was observed at pH 4, then the removal rate decreased with the increase of pH. The lower value of removal rate at pH2 was due to the fast interaction between Cu and KIO3 and the precipitation of CuI on the pad, which makes the pad glassy, resulting in lowered removal rates. This was confirmed by XPS measurements. The decreased CMP removal rates when the pH is higher than 4 might be due to the weaker oxidation power of KIO3 with the increase of pH.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F6.6
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Steigerwald, J. M. Murarka, S. P. and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, NewYork, 1997.Google Scholar
2. Hu, C. K. Luther, B. Kaufman, F. B. Humnel, J. Uzoh, C. and Pearson, D. J. Thin Solid Films, 262, 84 (1995).Google Scholar
3. Lakshminarayanan, S. Steigerward, J. M. Price, D. T. Bourgeois, M. Chow, T. P. Gutmann, R. J. and Murarka, S. P. IEEE Electron. Device Lett., 15, 307 (1994).Google Scholar
4. Carpio, R. Farkas, J. and Jairath, R. Thin Solid Films, 266, 238 (1995).Google Scholar
5. Hsu, J. W. Chiu, S. Y. Tsai, M. S. Dai, B. T. Feng, M. S. and Shih, H. C. J. Vac. Sci. Technol. B 20, 608 (2002).Google Scholar
6. Luo, Q. Campbell, D. R. and Babu, S. V. Langmuir, 12, 3563 (1996).Google Scholar
7. Stavreva, Z. Zeidler, D. Plotner, M. and Drescher, K. Appl. Surf. Sci., 91, 192 (1995).Google Scholar
8. Gutmann, R. J. Steigerwald, J. M. You, L. Price, D. T. Neirynck, J. Duquette, D. J. and Murarka, S. P., Thin Solid Films, 270, 596 (1995).Google Scholar
9. McIntyre, N. S. Sunder, S. D. W. Shoesmith and Stanchell, F. W. J. Vac. Sci. Technol., 18, 714 (1981).Google Scholar
10. Gaarenstron, S. W. and Winograd, N. J. Chem. Phys., 67, 3500 (1977).Google Scholar
11. Liang, H. Martin, J. M. and Lee, R. J. Electronic Materials, 30, 391 (2001).Google Scholar
12. Hsu, J. W. Chiu, S. Y. Tsai, M. S. and Dai, B. T. Feng, M. S. and Shih, H. C. J. Vac. Sci. Technol. B 20(2), 608 (2002).Google Scholar