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Persistent photocurrent effects in GaN/AlGaN multiquantum wells

Published online by Cambridge University Press:  21 March 2011

A. Bonfiglio ,
G. Traetta ,
M. Lomascolo ,
A. Passaseo  and
R. Cingolani
A. Bonfiglio
Affiliation:
Unita' INFM, Dept. Ingegneria Elettrica ed Elettronica, University of Cagliari, ITALY
G. Traetta
Affiliation:
Unita' INFM, Dept. Ingegneria dell'Innovazione, University of Lecce, ITALY
M. Lomascolo
Affiliation:
IME-CNR, Via Arnesano, I-73100, Lecce, ITALY
A. Passaseo
Affiliation:
Unita' INFM, Dept. Ingegneria dell'Innovazione, University of Lecce, ITALY
R. Cingolani
Affiliation:
Unita' INFM, Dept. Ingegneria dell'Innovazione, University of Lecce, ITALY
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Abstract

PhotoCurrent (PC) experiments on GaN/AlGaN multiple quantum wells, both spectrally and temporally resolved, have shown that a photopersistence effect exists in our samples even at room temperature. A peak in the rise and decay times of PC vs. time appears in correspondence of wavelengths typical of Yellow-Band features while this is not seen in PL. This fact seems to indicate that YB defects give rise here to carrier trapping rather than recombination. Furthermore, the observed persistence times seem to be peculiar of MultiQuantum Wells and this possibly calls into play the role of built-in fields in the defects dynamics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E4.10
Copyright
Copyright © Materials Research Society 2001

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References

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