Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-06T06:12:57.472Z Has data issue: false hasContentIssue false

Persistent Electronic Conduction in 12CaO7Al2O3 Thin Films Produced by Ar Ion Implantation: Selective Kick-Out Effect Leads to Electride Thin Films

Published online by Cambridge University Press:  17 March 2011

Masashi Miyakawa
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
Katsuro Hayashi
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
Yoshitake Toda
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Toshio Kamiya
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Masahiro Hirano
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
Hideo Hosono
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Get access

Abstract

A new method to convert 12CaO7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar+ ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm−2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×1021 cm−3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm−1. On the other hand, fluences less than 1×1017 cm−2 kept the films transparent and insulating.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Hayashi, K., Hirano, M., Matsuishi, S., and Hosono, H., J.Am.Chem.Soc. 124, 738(2002).Google Scholar
2 Hayashi, K., Matsuishi, S., Kamiya, T., Hirano, M., and Hosono, H., Nature 419, 462(2002).Google Scholar
3 Matsuishi, S., Toda, Y., Miyakawa, M., Hayashi, K., Kamiya, T., Hirano, M., Tanaka, I., and Hosono, H., Science 301, 626(2003).Google Scholar
4 Dye, J. L., Inorg. Chem. 36, 3817(1997).Google Scholar
5 Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).Google Scholar
6 Kinoshita, C., J. Nucl. Mater. 191–194, 67 (1992).Google Scholar
7 Sushko, P., Schluger, K., Hayashi, K., Hirano, M., and Hosono, H., Phys. Rev. Lett. 91, 126401 (2003).Google Scholar
8 Tardio, M., Ramirez, R., Gonzalez, R., Chen, Y., and Alves, E., Nucl. Instr. And Meth. B 191, 191 (2002).Google Scholar