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Perfect selective Si epitaxial growth realized by synchrotron radiation irradiation during disilane molecular beam epitaxy

Published online by Cambridge University Press:  22 February 2011

Yuichi Utsumi ,
Housei Akazawa  and
Masao Nagase
Yuichi Utsumi
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa pref., 243-01, JAPAN
Housei Akazawa
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa pref., 243-01, JAPAN
Masao Nagase
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa pref., 243-01, JAPAN
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Abstract

Perfect selectivity in Si epitaxial growth on a Si/SiO2 substrate has been achieved by irradiating SR during molecular beam epitaxy (MBE) using disilane. This differs from conventional selective growth by MBE using disilane in that no Si nucleation occurs on SiO2 irrespective of growth time. Temperature above 700°C is necessary for SR -induced selective growth. This perfect selectivity might result from the elimination of adsorbed Si atoms induced by photo-stimulated evaporation of SiO2 which results in the perfect suppression of Si nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 525
Copyright
Copyright © Materials Research Society 1994

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References

references

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