Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T06:50:18.417Z Has data issue: false hasContentIssue false
  • English
  • Français

Percolation Transition and Accumulation of Strain in Chalcogenide Glasses

Published online by Cambridge University Press:  25 February 2011

Kazuo Murase  and
T. Fukunaga
Kazuo Murase
Affiliation:
Department of Physics, Osaka University, 1-1 Machikaneyama-cho, Toyonaka 560, Japan
T. Fukunaga
Affiliation:
Oki Electric Industry Co., Research Lab., Hachioji 193, Japan
Get access

Abstract

Network structures and glass forming tendency of g-(Ge1−ySny)1−x (Se, or S)x are discussed in connection with the percolation transition near the Phillips critical composition xc = 0.8, and local or extended topological transitions due to strains induced by compositional changes or applied pressures.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 101
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fritzsche, H.. in Fundamental Physics of Amorphous Semiconductors, edited by Yonezawa, F. (Springer-Verlag, New York 1981) ppl–13.Google Scholar
2. Phillips, J.C., Phys.Today 35(2), 27–33(1982).CrossRefGoogle Scholar
3. Weare, D., in Excitations in Disordered Systems, edited by Thorpe, M.F., NATO Adv. Studies Inst. Series B78 (Plenum Press, New York 1982) pp579–590.Google Scholar
4. Tronc, P., Bensoussan, M., Brevac, A. and Sebenne, C., Phys.Rev. B 8, 5947 (1973).CrossRefGoogle Scholar
5. Lucovsky, G., Galeener, F.L., Keezer, R.C., Geils, R.H. and Six, H.A., Phys. Rev. B10, 5134(1974).CrossRefGoogle Scholar
6. Kumagai, N., Shirafuji, J. and Inuishi, Y., J.Phys.Soc.Japan 42, 1262(1977).CrossRefGoogle Scholar
7. Nemanich, R.J., Solin, S.A. and Lucovsky, G., Solid State Commun. 21, 273 (1977).CrossRefGoogle Scholar
8. Lucovsky, G. and Hayes, T.M., in Amorphous Semiconductors, edited by Brodsky, M.H. (Springer-Verlag, New York 1979) pp215–250.CrossRefGoogle Scholar
9. Boolchand, P., Grothaus, J., Bresser, W.J. and Surayn, P., Phys.Rev. B25, 2925(1982).Google Scholar
10. Boolchand, P., in Physical Properties of Amorphous Materials, edited by Alser, D., Schwartz, B.B. and Steele, M.C. (Plenum Publishing Corporation, 1985) pp221–260.CrossRefGoogle Scholar
11. Phillips, J.C., J.Non-Crystalline Solids 34, 153(1979); 43, 37(1981).CrossRefGoogle Scholar
12. Azoulay, R., Thibierge, H. and Brenac, A., J.Non-Crystalline Solids 18, 33(1975).CrossRefGoogle Scholar
13. Thorpe, M.F., J.Non-Crystalline Solids 57, 355(1983); in this book.CrossRefGoogle Scholar
14. Murase, K., Fukunaga, T., Tanaka, Y., Yakushiji, K. and Yunoki, I., Physica 117B & 118B, 962(1983).Google Scholar
15. Fukunaga, T., Tanaka, Y., and Murase, K., Solid State Commun. 42, 513(1982).CrossRefGoogle Scholar
16. Murase, K., Fukunaga, T., Yakushiji, K., Yoshimi, T. and Yunoki, I., J.Non-Crystalline 59 & 60, 883(1983).CrossRefGoogle Scholar
17. Brindenbaugh, P.M., Espinosa, G.P., Griffiths, J.E., Phillips, J.C. and Remeika, J.P., Phys.Rev. B20, 4140(1979).CrossRefGoogle Scholar
18. Nemanich, R.J., Galeener, F.L., Mikkelson, J.C. Jr. and Sinclain, G.A.N., Physica 117B & 118B, 959(1983).Google Scholar
19. Lucovsky, G., Wong, C.K. and Pollard, W.B., J.Non-Crystalline Solids 59 & 60, 839(1983).CrossRefGoogle Scholar
20. Arai, K., J.Non-Crystalline Solids 59 & 60, 1059(1983).CrossRefGoogle Scholar
21. Murase, K., Yakushiji, K. and Fukunaga, T., J.Non-Crystalline Solids 59 & 60, 855(1983).Google Scholar
22. Murase, K. and Fukunaga, T., in Optical Effects in Amorphous Semiconductors, edited by Taylor, P.C. and Bishop, S.G. (American Institute of Physics, AIP Conf. Proc. No120, New York, 1984) pp449–456.Google Scholar
23. Weinstein, B.A., Zallen, R. and Slade, M.L., Phys.Rev. B25, 781(1982).CrossRefGoogle Scholar
24. Murase, K. and Fukunaga, T., in Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by Chadi, J.D. and Harrison, W.A. (Springer-Verlag, New York, 1985) pp943–946.CrossRefGoogle Scholar
25. Phillips, J.C. (private communications)Google Scholar
26. Stevens, M., Grothauss, J. and Boolchand, P., Solid State Commun. 47, 199 (1983).CrossRefGoogle Scholar
27. Phillips, J.C., Solid State Commun. 47, 203(1983).CrossRefGoogle Scholar
28. Stevens, M., Boolchand, P. and Hernandez, J.G., Phys.Rev. B25, 781(1982).Google Scholar
29. Boolchand, P. and Grothaus, J., Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by Chadi, J.D. and Harrison, W.A. (Springer-Verlag, New York 1985) pp833–836.CrossRefGoogle Scholar
30. Ruffolo, D. and Boolchand, P., Phys.Rev.Letters 55, 242(1985).CrossRefGoogle Scholar
31. Boolchand, P., in this book.Google Scholar