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Perchlorosilanes and Perchlorocarbosilanes as Precursors to Silicon Carbide

Published online by Cambridge University Press:  01 February 2011

Vladimir Sevastyanov ,
Yurij Ezhov ,
Roman Pavelko  and
Nikolaj Kuznetsov
Yurij Ezhov
Affiliation:
[email protected], Institute for High Energy Densities, "IVTAN" Association, Russian Academy of Science, Izhorskaya st. 13/19, Moscow, N/A, 125412, Russian Federation
Roman Pavelko
Affiliation:
[email protected], N.S.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Science, Leninskij av. 31, Moscow, N/A, 119991, Russian Federation
Nikolaj Kuznetsov
Affiliation:
[email protected], N.S.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Science, Leninskij av. 31, Moscow, N/A, 119991, Russian Federation
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Abstract

Homologues with the general stoichiometry a(SiCl4) : bSi : cC : d(SiC) are shown to be potential precursors for the low-temperature gas-phase synthesis of silicon carbide. Thermal decomposition of these precursors yields the chemically stable gaseous species SiCl4 and condensed Si, C, SiC, SiC+Si, or SiC+C. Thermodynamic modeling of the thermal decomposition of octachlorotrisilane, Si3Cl8, is used to analyze the key features of the thermolysis of perchlorosilanes with the general stoichiometry a(SiCl4) : bSi. The equilibrium compositions of reaction products in the Si3Cl8+CO system are determined. This reaction system enables low-temperature (400 – 1200 K) synthesis of silicon carbide.

Keywords

simulationchemical vapor deposition (CVD) (chemical reaction)pyrolysis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-12
Copyright
Copyright © Materials Research Society 2006

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