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Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

Published online by Cambridge University Press:  01 February 2011

Yutaka Natsume
Affiliation:
[email protected], Asahi-Kasei corporation, Analysis & Simulation Center, 2-1 Samejima, Fuji, Shizuoka, 4168501, Japan
Takashi Minakata
Affiliation:
[email protected], Asahi-KASEI corporation, 2-1 Samejima, Fuji, Shizuoka, 4168501, Japan
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Abstract

We have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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