Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T18:22:43.006Z Has data issue: false hasContentIssue false
  • English
  • Français

PECVD of Low Dielectric Constant Fluorine-Doped SiO2 Using TICS/O2/TFAA with In-Situ Annealing

Published online by Cambridge University Press:  10 February 2011

I. Idris  and
O. Sugrura
I. Idris
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN, [email protected]
O. Sugrura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN, [email protected]
Get access

Abstract

A fluorine-doped silicon dioxide (SiO2:F) film with dielectric constant as low as 3.0 was deposited by introducing trifluoroacetic anhydride ((CF3CO) 2O TFAA) into our hydrogen-free SiO2 PECVD system using tetraisocyanatesilane (Si(NCO)4 TICS) and O2. The film was deposited at 100°C and 0.5 Torr. It was annealed by in-situ, 0.2 Torr O2 plasma treatment at 400°C for 1 hour, as well as post-metallization annealing in N2 ambient at 400°C for 1 hour. The refractive index and the ratio of infrared absorbance of Si-F/Si-O-Si peak intensity were 1.37 and 11.7%, respectively. No peak related to water absorption was clearly observed in its infrared spectrum even after contact-holes opened and dipped into boiling water for 2 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 233
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yoshimaru, M., Koizumi, S. and Shimokawa, K., J. Vac. Sci. Technol. A 15 p. 2908 (1997).10.1116/1.580884Google Scholar
2. Miyajima, H., Katsumata, R., Nakasaki, Y., Nishiyama, Y. and Hayasaka, N.: Jpn. J. Appl. Phys. 35 p. 621 (1996).Google Scholar
3. Tamura, T., Sakai, J., Satoh, M., Inoue, Y. and Yoshitaka, H.: Jpn. J. Appl. Phys., 36 p. 1627 (1997).10.1143/JJAP.36.1627Google Scholar
4. Idris, I. and Sugiura, O.: Jpn. J. Appl. Phys., 34 L772 (1995).10.1143/JJAP.34.L772Google Scholar
5. Idris, I. and Sugiura, O.: Jpn. J. Appl. Phys., 37 p. 6562 (1998).10.1143/JJAP.37.6562Google Scholar