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PECVD Amorphous Silicon Nitride at 120°C for a-Si:H TFTs.

Published online by Cambridge University Press:  17 March 2011

Denis Stryahilev ,
Andrei Sazonov  and
Arokia Nathan
Denis Stryahilev
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Andrei Sazonov
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Arokia Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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Abstract

The effect of a-SiNx films stoichiometry and their physical properties on the electrical integrity and masking ability is studied. The films are deposited at 120° C by 13.56 MHz PECVD from SiH4+NH3 + N2 gas mixture. They have the N/Si ratio of 1.4 to 1.7 and hydrogen concentration of 25 to 40 at.%. The electrical characterization was carried out by I-V measurements. An electrical resistivity of ∼1016 Ohm-cm and breakdown voltage of 5.5 MV/cm have been achieved for our PECVD nitride films. The performance of a-Si:H TFTs with these silicon nitride as the gate dielectric and passivation layer has been also evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.15.1
Copyright
Copyright © Materials Research Society 2001

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