Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T19:50:13.099Z Has data issue: false hasContentIssue false
  • English
  • Français

Pd/AlN/Si or SiC Structure for Hydrogen Sensing Device

Published online by Cambridge University Press:  15 March 2011

Flaminia Serina ,
C. Huang ,
G. W. Auner ,
R. Naik ,
S. Ng  and
L. Rimai
Flaminia Serina
Affiliation:
ChE Dept., Wayne State University, Detroit MI
C. Huang
Affiliation:
ECE Dept., Wayne State University, Detroit MI
G. W. Auner
Affiliation:
ECE Dept., Wayne State University, Detroit MI
R. Naik
Affiliation:
Physics and Astronomy Dept., Wayne State University, Detroit MI
S. Ng
Affiliation:
ChE Dept., Wayne State University, Detroit MI
L. Rimai
Affiliation:
ECE Dept., Wayne State University, Detroit MI
Get access

Abstract

An AlN (insulator) MIS Hydrogen Sensor was created using plasma source molecular beam epitaxy (PSMBE) deposition on Si (111) and 6H-SiC. A Pd layer was deposited on top of the AlN film via magnetron sputtering technique utilizing a hard mask. Pd was chosen since H2 readily diffuses within its bulk, thus Pd acts not only as a metal electrode of the MIS structure, but also as a catalyst for hydrogen dissociation. To optimize the design structure several sensors with different AlN and Pd thickness have been developed. RHEED and XRD measurements show that AlN film is epitaxial on both Si (111) and 6H-SiC substrates. The sensors were characterized using capacitance versus voltage C(V) and I(V) measurements, at different frequencies ranging from 1kHz to 1 MHz. Shifts in the C-V and I-V curves occurred with the introduction of hydrogen in the chamber. The temperature, hydrogen partial pressure, effects of oxygen and hydrocarbon gases, insulator and metal thicknesses on sensor response were analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T1.3.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lundstom, S. Shivamaran, C. , Svensson, and , Lundqvist, Appl. Phys. Lett. 26, 55 (1975).Google Scholar
2. Samman, A., Rimai, L., Auner, G., PhD Dissertation, Wayne State University, 1997; J. Appl. Physics, March 2000; Sensors and Actuators (in press)Google Scholar
3. Morkoc, H. et al. , Large Bandgap SiC, III_V Nitride, and ZnSe based Semiconductors Device Technologies, J. Appl. Phys., Vol. 76, Aug. 1994.Google Scholar
4. Auner, G.W., Lenane, T., Ahmad, F., Naik, R., and Kuo, P. K., in Wide Bandgap Electronic Materials, edited by Wu, Z. L. and Prelas, M. A. (Kluwer, Academic, Dordrecht, 1995), p. 329 Google Scholar
5. Sze, S.M., 1994, Semiconductor Sensors, John Wiley & Son Google Scholar
6. Folgerberg, J., Eriksson, M., Dannetun, H., and Petersson, L.-G., J. Appl. Phys. 78 (2), 998–996 (1995).Google Scholar