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Pbte(Ga) - New Multispectral Infrared Photodetector

Published online by Cambridge University Press:  10 February 2011

A. I. Belogorokhov ,
I. I. Ivanchik  and
D. R. Khokhlov
A. I. Belogorokhov
Affiliation:
Institute of Rare Metals, Moscow, Russia
I. I. Ivanchik
Affiliation:
Physics Department, Moscow State University, Moscow 119899, Russia, [email protected]
D. R. Khokhlov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, Russia, [email protected]
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Abstract

Doping of the lead telluride - narrow-gap semiconductor - with gallium results under certain conditions in the Fermi level pinning in the gap thus providing the semiinsulating state of material. Besides that, the persistent photoconductivity effect is observed at a temperatures T < Tc = 80 K. The photoresponse kinetics consists of two parts: the slow one with the characteristic time tchar going up to 104 s at T = 4.2 K, and the fast part with tchar, of the order of 10 ms. We have measured the spectra of a fast part of the photoresponse using the Fouriertransform spectrometer “Bruker” IFS- 113v. The photoconductivity is observed in two spectral regions: in the middle- and far - infrared. Response in the middle-infrared consists of the ordinary fundamental band and a strong superimposed resonance-like structure just at the bandgap energy. The position of this spectral line may be tuned in a wide range (3.5–5.5) μm by variation of temperature and/or composition of a lead telluride-based alloy. This middle-infrared photoresponse becomes considerable already at T = 160 K. The photoresponse in the far-infrared may be depending on the excitation conditions an analogous resonance-like structure at a wavelength 70 μm, or a broad band with the cutoff wavelength at least higher than 500 μm, which is the highest cutoff wavelength for the photon detectors observed up to date.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 645
Copyright
Copyright © Materials Research Society 1998

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References

1. Lambrecht, A., Boettner, H., Ange, M., Kurbel, R., Fach, A., Halford, B., Sciessl, U. and Tacke, M., Semicond. Sci. Technol. 8, S334 (1993).Google Scholar
2. Akimov, B.A., Dmitriev, A.V., Khokhlov, D.R. and Ryabova, L.I., Phys. Stat. Sol. (a) 137, 9 (1993).Google Scholar
3. Akimov, B.A., Brandt, N.B., Gas'kov, A.M., Zlomanov, V.P., Ryabova, L.I. and Khokhlov, D.R., Sov. Phys. Semicond. 17, 53 (1983).Google Scholar
4. Drabkin, I.A. and Moizhes, B.Ya., Sov. Phys. Semicond. 17, 611 (1983).Google Scholar
5. Zasavitskiy, I.I., Matsonashvili, B.N., Pankratov, O.A. and Trofimoy, V.T., JETP Lett. 42, 1 (1985).Google Scholar
6. Mooney, P.M., J. Appl. Phys. 67, R1 (1990).Google Scholar
7. Nimtz, G. and Schlicht, B. in Narrow-Gap Semiconductors, edited by Honler, G. (Berlin, Springer, 1983).Google Scholar
8. Akimov, B.A., Brandt, N.B., Ryabova, L.I. Sokovishin, V.V. and Chudinov, S.M, Joum. Low Temp. Phys. 51, 9 (1983).Google Scholar
9. Belogorokhov, A.I., Belokon', S.A., Ivanchik, I.I. and Khokhlov, D.R., Sov. Phys. Solid State 34, 873 (1992).Google Scholar
10. Romcevic, N., Popovic, Z.V., Khokhlov, D., Nikorich, A.V. and Koenig, W., Phys. Rev. B 43, 6712 (1991).Google Scholar
11. Romcevic, N., Popovic, Z.V. and Khokhlov, D.R., J. Phys.: Condens. Matt. 7, 5105 (1995)Google Scholar
12. Kinch, M.A. and Buss, D.D., Solid State Commun. 11, 319 (1972).Google Scholar