Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:24:12.471Z Has data issue: false hasContentIssue false
  • English
  • Français

Patterning of Microwave Plasma Deposited Diamond Films

Published online by Cambridge University Press:  28 February 2011

Moeljanto W. Leksono  and
Howard R. Shanks
Moeljanto W. Leksono
Affiliation:
Ames Laboratory-USDOE and Department of Physics, Iowa State University, Ames, IA 50011
Howard R. Shanks
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
Get access

Abstract

Patterning has been successfully performed on diamond films deposited on polished silicon wafers from CH4 and H2 gases using microwave plasma chemical vapor deposition. The selectivity was achieved using a lift off process on silicon wafers which had been polished with diamond paste. The lift off process involves deposition and patterning of a thin ZnO film followed by deposition of amorphous silicon using a glow discharge technique. This is followed by microwave plasma CVD of the diamond film. The film is deposited selectively on the crystalline silicon areas of the substrate. Quality and patterning resolution of the resulting diamond films have been determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 189: Symposium L – Microwave Processing of Materials II , 1990 , 87
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Field, J.E., The Properties of Diamonds (Academic Press, London, 1979).Google Scholar
2. Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Crystal Growth 62, 642 (1983).Google Scholar
3. Vries, R.C. De, Ann. Rev. Mater. Sci. 17, 161 (1987).Google Scholar
4. Badzian, A.R., Badzian, T., Roy, R., Messier, R., and Spear, K.E., Mat. Res. Bull. 23, 531 (1988).Google Scholar
5. Kobashi, K., Nishimura, K., Kawate, Y., and Horiuchi, T., Phys. Rev. B 38, 4067 (1988).Google Scholar
6. Chang, C.P., Flamm, D.L., Ibbotson, D.E., and Mucha, J.A., J. Appl. Phys. 63, 1744 (1988).Google Scholar
7. Williams, B.E. and Glass, J.T., J. Mater. Res. 4, 373 (1989).Google Scholar
8. Ravi, K.V. and Landstrass, M.I., in Proceedings of the 4th International High Frequency Power Conversion Conference '89 (Intertec Communications, Ventura, CA, 1989), p. 103.Google Scholar
9. Bachmann, P.K. and Messier, R., C&EN 67 (20), 24 (1989).Google Scholar
10. Hirabayashi, K. and Taniguchi, Y., Appl. Phys. Lett. 53, 1815 (1988).Google Scholar
11. Ma, J.S., Kawarada, H., Yonehara, T., Suzuki, J., Wei, J., Yokota, Y., and Hiraki, A., Appl. Phys. Lett. 55, 1071 (1989).Google Scholar