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Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

Published online by Cambridge University Press:  10 February 2011

R. J. Shul ,
R. D. Briggs ,
J. Han ,
S. J. Pearton ,
J. W. Lee ,
C. B. Vartuli ,
K. P. Killeen  and
M. J. Ludowise
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603, [email protected]
R. D. Briggs
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603, [email protected]
J. Han
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
J. W. Lee
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
K. P. Killeen
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA 94304
M. J. Ludowise
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA 94304
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Abstract

Fabrication of group-Ill nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropie profiles, smooth surface morphologies, etch rates often exceeding 0.5 μm/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as -1.3 μm/min have been reported in ECR generated ICI plasmas at -150 V dc-bias. In this study, we report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl2- and BCl3-based plasma chemistries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 355
Copyright
Copyright © Materials Research Society 1997

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