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Passivation of GaAs Laser Mirrors by Ion-Beam Deposited Al2O3

Published online by Cambridge University Press:  25 February 2011

D. J. Webb ,
H. -P. Dietrich ,
F. Gfeller ,
A. Moser  and
P. Vettiger
D. J. Webb
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
H. -P. Dietrich
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
F. Gfeller
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
A. Moser
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
P. Vettiger
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
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Abstract

The use of ion-beam sputtered Al2O3 to passivate the mirrors of semiconductor injection lasers is described. Dense films, which offer considerable protection against corrosion, can be deposited without damage to the crystal surface. The overall quality of the passivation is demonstrated by long-term stress testing of the lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 507
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Thompson, G.H.B., The Physics of Semiconductor Lasers, (John Wiley & Sons, New York, 1980).Google Scholar
2. Yuasa, T., Endo, K., Torikai, T., Yonezu, H., Appl. Phys. Lett., 34 (10), 685 (1979).10.1063/1.90645CrossRefGoogle Scholar
3. Henry, C.H., Petroff, P.M., Logan, R.A., Meritt, F.R., J. Appl. Phys., 50 (5), 3721 (1979).10.1063/1.326278Google Scholar
4. Kimmerling, L.C., Solid-State Electronics, 21 1391 (1978).10.1016/0038-1101(78)90215-0Google Scholar
5. Fukuda, M., IEEE J. Quantum Electron., QE-I9 (11), 1692 (1983).10.1109/JQE.1983.1071767Google Scholar
6. Varasi, M., Misiano, C., Lasaponara, L., Thin Solid Films, 117, 163 (1984).10.1016/0040-6090(84)90284-0Google Scholar
7. Harder, C., Buchmann, P., Meier, H., Electron. Lett. 22 (20), 1081 (1981).10.1049/el:19860741Google Scholar
8. Kappeler, F., Mettler, K., Zschauer, K.-H., lEE Proc., 129, Pt. 1, No. 6, 256 (1982).Google Scholar
9. Walker, T.W., Guenther, A.H., Nielsen, P.E., IEEE J. Quantum Electron., QE-17 (10) 2041 (1981).10.1109/JQE.1981.1070662Google Scholar
10. Peek, J.A.F., IEEE J. Quantum Electron., QE-17 (5), 781 (1981).10.1109/JQE.1981.1071179Google Scholar