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Passivation of Gaas by Novel P2S5/(NH4)2Sx Sulfurization Techniques

Published online by Cambridge University Press:  25 February 2011

J. T. Hsieh ,
C. Y. Sun  and
H. L. Hwang
J. T. Hsieh
Affiliation:
Department of Electrical Engineering National Tsing Hua University, Hsin-chu, Taiwan, R.O.C.
C. Y. Sun
Affiliation:
Departmment of Electronic Engineering, National Taiwan Institute of Technology, Taipei, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Department of Electrical Engineering National Tsing Hua University, Hsin-chu, Taiwan, R.O.C.
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Abstract

A new surface passivation technique using P2S5/(NH4)2S on GaAs was investigated, and the results are compared with those of the (NH4)2Sx treatment. With this new surface treatment, the effective barrier heights for both Al- and Au—GaAs Schottky diodes were found to vary with the metal work functions, which is a clear evidence of the lower surface state density. Results of I—V measurements show that P2S5/(NH4)2S—passivated diodes have lower reverse leakage current and higher effective barrier height than those of the (NH4)2Sx -treated ones. Auger Electron Spectroscopy, X—ray photoelectron spectroscopy and Raman scattering measurements were done to characterize the surfaces including their compositions and surface band bending. In this paper, interpretations on this novel passivation effect is also provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 659
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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