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Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source
Published online by Cambridge University Press: 10 February 2011
Abstract
Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.
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- Copyright © Materials Research Society 1996
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