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Parallel Conduction in a-Si:H/a-Si1−xCx:H Multilayers

Published online by Cambridge University Press:  01 January 1993

J. Bertomeu ,
J. Puigdollers ,
J.M. Asensi ,
J.C. Delgado  and
J. Andreu
J. Bertomeu
Affiliation:
Universitat de Barcelona , Departament de Física Aplicada i Electrònica, Av. Diagonal 647 , 08028-Barcelona, Spain.
J. Puigdollers
Affiliation:
Universitat de Barcelona , Departament de Física Aplicada i Electrònica, Av. Diagonal 647 , 08028-Barcelona, Spain.
J.M. Asensi
Affiliation:
Universitat de Barcelona , Departament de Física Aplicada i Electrònica, Av. Diagonal 647 , 08028-Barcelona, Spain.
J.C. Delgado
Affiliation:
Universitat de Barcelona , Departament de Física Aplicada i Electrònica, Av. Diagonal 647 , 08028-Barcelona, Spain.
J. Andreu
Affiliation:
Universitat de Barcelona , Departament de Física Aplicada i Electrònica, Av. Diagonal 647 , 08028-Barcelona, Spain.
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Abstract

This paper deals with the electrical properties in the parallel direction of compositionally modulated amorphous silicon/amorphous silicon-carbon multilayers. Conductivity of three series of samples with varying well and barrier thicknesses is studied. The results show that dark conductivity decreases when reducing a-Si:H layer thickness. This is interpreted as an alloy effect at interfaces. The role of the a-Si1-xCx:H layers in the photoconductivity decrease observed in series with variable mean composition and constant well thickness is discussed

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 699
Copyright
Copyright © Materials Research Society 1993

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References

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