Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T06:58:16.140Z Has data issue: false hasContentIssue false

Oxygen Tracer Diffusion in Sol-Gel Derived Pb(Zr,Ti)O3 thin Films

Published online by Cambridge University Press:  21 February 2011

John J. Vajo
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
L.A. Momoda
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
S.B. Wong
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
G.S. Kamath
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
Get access

Abstract

We have studied oxygen diffusion in thin films of Pb(Zr,Ti)O3 on Pt/Ti/SiO2/Si <100> multilayer substrates using 18O as a tracer. The PZT films were synthesized using the sol-gel technique and crystallized in air at 650° C for 30 minutes. Diffusion experiments were conducted in one atmosphere of 18O2 at tmipertures between 400-600°C, the extent of exchange was monitored using secondary ion mass spectromentry. Exchange profiles were modeled using solutions of the diffusion equation with boundary conditions for a layer with finite thickness. Significant exchange (>60%) of 16O by 18O was measured after treatment under conditions similar to those used for crystallization. At low levels of exchange, oxygen diffusion does not follow a simple Fickian profile and differences exist between nominally identical films. These results suggest that oxygen exchange is sensitive to the film's microstructure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Smyth, D. M., Ferroelectrics 116, 117 (1991).Google Scholar
[2] Scott, J.F. and Araujo, C. A. Paz de, Science 246, 1400 (1989).Google Scholar
[3] Yamiji, A., J. Am. Ceram. Soc. 58, 152 (1975).CrossRefGoogle Scholar
[4] Shirasaki, S., Yamamura, H., Haneda, H., Kakegawa, K. and Moori, J., J. Chem. Phys. 73, 4640 (1980).CrossRefGoogle Scholar
[5] Hasegawa, A., Fujitsu, S., Koumoto, K. and Yanagida, H., Japan. J. Appl. Phys. 30, 1252 (1991).Google Scholar
[6] Kwok, C.K. and Desu, S.B. in Ferroelectric Thin Films II, edited by Kingon, A.I., Myers, E.R. and Tuttle, B. (Mater. Res. Soc. Proc. 243, Boston, MA, 1992) pp. 393.Google Scholar
[7] Schwartz, R.W., Assink, R. A. and Headley, J.T. in Ferroelectric Thin Films II, edited by Kingon, A.I., Myers, E.R. and Tuttle, B. (Mater. Res. Soc. Proc. 243, Boston, MA, 1992) pp. 245.Google Scholar
[8] Qu, B.D., Wang, Y.G., Zhong, W.L., Wang, K.M. and Wang, Z.L., J. Appl. Phys. 71, 3467 (1992).CrossRefGoogle Scholar
[9] Grill, A., Kane, W., Viggiano, J., Brady, M. and Laibowitz, R., J. Mat. Res. 7, 3260 (1992).CrossRefGoogle Scholar
[10] Olowolafe, J.O., Jones, R.E., Jr., Campbell, A.C., Hegde, R.I., Mogab, C.J. and Gregory, R.B., J. Appl. Phys. 73, 1764 (1993).Google Scholar
[11] Tuck, B., Introduction to Diffusion in Semiconductors, (Peter Peregrinus Ltd., England, 1974), p. 25.Google Scholar
[12] Pretorius, R., Harris, J.M. and Nicolet, M.A., Solid State Electronics 21, 667 (1978).Google Scholar