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Oxygen Related Defect Center Red Room Temperature Photoluminescence in as Made and Oxidized Porous Silicon

Published online by Cambridge University Press:  15 February 2011

S. M. Prokes  and
W. E. Carlos
S. M. Prokes
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
W. E. Carlos
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

Since bulk silicon does not emit light in the visible part of the spectrum, the discovery of strong visible luminescence from porous silicon has been quite surprising and has generated significant interest. This material differs from bulk silicon in that it consists of interconnected silicon nanostructures, having very large surface to volume ratios. The first emission mechanism proposed involved carrier recombination within quantum size silicon particles, but more recent work has shown that surface emission models are more likely. In this paper, an interfacial oxygen center luminescence model will be discussed, with supporting experimental data. A direct correlation between the presence of these centers and the red photoluminescence in both as-made and oxidized PoSi will also be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 153
Copyright
Copyright © Materials Research Society 1996

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