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Oxygen incorporation into MBE-grown AlGaAs layers

Published online by Cambridge University Press:  11 February 2011

S. Naritsuka ,
O. Kobayashi ,
K. Mitsuda ,
T. Maruyama  and
T. Nishinaga
S. Naritsuka
Affiliation:
Materials Science and Engineering, Meijo University, 1–501 Shiogama-guchi Tenpaku-ku, Nagoya 468–8502, Japan
O. Kobayashi
Affiliation:
Materials Science and Engineering, Meijo University, 1–501 Shiogama-guchi Tenpaku-ku, Nagoya 468–8502, Japan
K. Mitsuda
Affiliation:
Materials Science and Engineering, Meijo University, 1–501 Shiogama-guchi Tenpaku-ku, Nagoya 468–8502, Japan
T. Maruyama
Affiliation:
Materials Science and Engineering, Meijo University, 1–501 Shiogama-guchi Tenpaku-ku, Nagoya 468–8502, Japan
T. Nishinaga
Affiliation:
Materials Science and Engineering, Meijo University, 1–501 Shiogama-guchi Tenpaku-ku, Nagoya 468–8502, Japan
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Abstract

The incorporation mechanism of oxygen into MBE-grown AlGaAs layers was systematically studied by changing the growth temperature and AlAs mole fraction. It was found that segregation of oxygen atoms strongly influences oxygen incorporation. By taking into account the surface segregation of oxygen, all of the particular characteristics observed in the oxygen incorporation into MBE-grown AlGaAs layers can be explained including a peak and a dip formation in the profile. Oxygen atoms accumulate on the surface of the substrate due to surface segregation and the number multiplied by the coefficient of surface segregation determines the oxygen incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.9
Copyright
Copyright © Materials Research Society 2003

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References

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