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Oxygen in Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

Hans Ch. Alt
Hans Ch. Alt*
Affiliation:
Siemens Research Laboratories for Materials Science and Electronics. Otto-Hahn-Ring 6, D-8000 München 83, Germany
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Abstract

The influence of oxygen-related defects on the compensation behavior of semi-insulating gallium arsenide has been studied. Off-center substitutional oxygen (Ga-O-Ga center) forms an electrically active defect with two levels in the fundamental gap. The negative-U ordering of these levels is the origin for very unusual electrical and optical properties. By oxygen implantation and annealing high concentrations of this center are created which are technologically useful to obtain high-resistivity surface layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 871
Copyright
Copyright © Materials Research Society 1992

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References

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