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Oxygen Bubble Formation and Transformation During High-Dose Oxygen Implantation and Annealing of Silicon

Published online by Cambridge University Press:  26 February 2011

S. J. Krause ,
S. Seraphin ,
B. L. Chen ,
B. Cordts  and
P. Roitman
S. J. Krause
Affiliation:
Chemical, Bio and Materials Engineering Dept., Arizona State University, Tempe, AZ 85287
S. Seraphin
Affiliation:
Materials Science and Engineering Dept., University of Arizona, Tucson, AZ 85721
B. L. Chen
Affiliation:
Chemical, Bio and Materials Engineering Dept., Arizona State University, Tempe, AZ 85287
B. Cordts
Affiliation:
Ibis Technology Corporation, Danvers, MA 01923
P. Roitman
Affiliation:
National Institute of Standards and Technology, Gaithersberg, MD 20899
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Abstract

The formation of bubbles during high dose implantation of oxygen into silicon, and the subsequent transformation of the bubbles during annealing, were studied with transmission electron microscopy (TEM). There was a threshold for bubble formation at a minimum dose of 0.3 × 1018 oxygen/cm2 and a lower temperature of 550°C. As dose increased the bubbles grew larger and the bubble trails lengthened. However, increasing beam current by a factor of 10 or increasing temperature to 700°C did not affect bubble formation. Bubble evolution during intermediate temperature annealing was also studied using TEM techniques. For 2 hour anneals between 1000 and 1100°C the oxygen bubbles transform into SiO2 particles by first forming a “shell” of SiO2, which then facets, grows inward, and finally completely transforms the bubble into an oxide particle. At temperatures greater than 1100°C the oxide particles dissolve by outdiffusion of the oxygen to the wafer surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 229
Copyright
Copyright © Materials Research Society 1991

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