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Oxides Influence on Electrical Properties of Si and A2B6 Materials.

Published online by Cambridge University Press:  21 March 2011

Andrii Andrukhiv ,
Galina Khlvap ,
Mikhail Andrukhiv  and
Violetta Belosertseva
Andrii Andrukhiv
Affiliation:
Komatsu Silicon America Inc., Hillsboro, OR 97124, U.S.A
Galina Khlvap
Affiliation:
State Pedagogical University, Department of Physics, 24 Franko street, Drogobych, 82100, Ukraine
Mikhail Andrukhiv
Affiliation:
State Pedagogical University, Department of Physics, 24 Franko street, Drogobych, 82100, Ukraine
Violetta Belosertseva
Affiliation:
State Politechnical University, 21 Frunze street, Kharkiv, 61002, Ukraine
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Abstract

It has been shown for the first time how atmospheric oxygen eff ects maj or electrical characteristics of MBE grown CdTe thin f ilms and CVD grown p-/p+ Si junction. I-V and C--V barrier-like characteristics indicate presence of CdO/CdTe quasi-3D microheteroj unctions and complexes at p/p+ interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA3.11.1
Copyright
Copyright © Materials Research Society 2001

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References

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